CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (SEK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 5 028In Stock
3 600Expected 2026-11-12
Cut Tape
120,23 kr
68,14 kr
67,15 kr
66,49 kr
57,04 kr
Reel
57,04 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 511In Stock
Cut Tape
36,82 kr
24,18 kr
16,92 kr
13,85 kr
13,30 kr
Reel
11,76 kr
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 815In Stock
Cut Tape
27,15 kr
17,58 kr
12,09 kr
9,74 kr
Reel
7,73 kr
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 699In Stock
Cut Tape
23,63 kr
15,17 kr
10,40 kr
8,28 kr
Reel
6,44 kr
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 601In Stock
1 800Expected 2027-02-04
Cut Tape
104,08 kr
59,57 kr
56,49 kr
53,30 kr
46,16 kr
Reel
45,72 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 872In Stock
Cut Tape
81,00 kr
44,07 kr
40,44 kr
39,78 kr
34,73 kr
Reel
33,74 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES Lead-Time 26 Weeks
Cut Tape
67,92 kr
40,22 kr
34,73 kr
31,87 kr
27,37 kr
Reel
27,37 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 218In Stock
Cut Tape
44,62 kr
29,45 kr
20,88 kr
17,91 kr
Reel
15,17 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 582In Stock
Cut Tape
125,95 kr
84,51 kr
78,25 kr
67,81 kr
Reel
59,13 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 457In Stock
Cut Tape
104,30 kr
58,03 kr
55,39 kr
47,04 kr
Reel
47,04 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2 028In Stock
Cut Tape
83,41 kr
45,50 kr
40,77 kr
Reel
36,05 kr
35,17 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
69,68 kr
37,37 kr
34,18 kr
27,58 kr
Reel
27,58 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN