1200V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs). These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 1200V SiC MOSFETs include 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling. These MOSFETs offer a low RDS(ON), superior power density, and cool-running performance. The 1200V SiC MOSFETs achieve up to 95.5% peak efficiency in EV charging and power conversion systems. These MOSFETs are ideal for applications, including EVs and DC-DC converters.

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GeneSiC Semiconductor SiC-MOSFET:ar 1200V 18mohm TO-263-7 G3F SiC MOSFET 753På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 546På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 562På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 495På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 18mohm TO-247-4 G3F SiC MOSFET
Datablad
428På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 20mohm TO-247-4 G3F SiC MOSFET 536På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 25mohm TO-263-7 G3F SiC MOSFET 257På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 25mohm TO-247-4 G3F SiC MOSFET 247På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 34mohm TO-247-4 G3F SiC MOSFET 456På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 40mohm TO-263-7 G3F SiC MOSFET 761På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 65mohm TO-263-7 G3F SiC MOSFET
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1 560På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 65mohm TO-247-4 G3F SiC MOSFET 473På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 75mohm TO-263-7 G3F SiC MOSFET 572På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 75mohm TO-247-4 G3F SiC MOSFET 1 685På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 20mohm TO-263-7 G3F SiC MOSFET 40På lager
800Förväntad 2026-08-31
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement