NxT2023N065M3S EliteSiC MOSFETs

onsemi NxT2023N065M3S EliteSiC MOSFETs are high-performance 650V Silicon Carbide (SiC) MOSFETs with a typical RDS(on) of 23mΩ and excellent thermal and switching characteristics. These MOSFETs feature low effective output capacitance, high efficiency, fast switching, and ultra-low gate charge. The NxT2023N065M3S MOSFETs support continuous drain currents up to 72A and operate across a wide temperature range from -55°C to 175°C. These MOSFETs are RoHS-compliant, halide-free, and housed in a compact T2PAK-7L package. The NVT2023N065M3S EliteSiC MOSFET is AEC-Q101 qualified, making it ideal for automotive-grade applications such as on-board chargers and DC-DC converters in EV/HEV platforms. The NTT2023N065M3S EliteSiC MOSFET is suitable for SMPS, solar inverters, UPS, energy storage, and EV charging infrastructure.

Resultat: 2
Välj Bild Artikelnummer
 Tillverk:
Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet.
Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge


onsemi SiC-MOSFET:ar T2PAK SIC 650V M3S 23MOHM
Datablad
1 283På lager
Klipp band
83,41 kr
45,50 kr
Papprulle
45,50 kr
MouseReel tillgängligt
Min.: 1
Multipla: 1
Max.: 80
: 800
SMD/SMT T2PAK-7 1 Channel 650 V 72 A 32.6 mOhms - 8 V, 22 V 4 V 74 nC - 55 C + 175 C 288 W Enhancement
onsemi SiC-MOSFET:ar T2PAK SIC 650V M3S 23MR
Datablad
613På lager
Klipp band
106,93 kr
59,79 kr
Papprulle
59,79 kr
Min.: 1
Multipla: 1
Max.: 80
: 800
SMD/SMT T2PAK-7 1 Channel 650 V 72 A 32.6 mOhms - 8 V, 22 V 4 V 74 nC - 55 C + 175 C 288 W Enhancement