BUK7Y1R0-40N & BUK7Y3R1-80M N-Channel MOSFETs

Nexperia BUK7Y1R0-40N and BUK7Y3R1-80M N-Channel MOSFETs are designed and qualified to meet AEC-Q101 requirements, delivering high performance and endurance. These MOSFETs offer fast and efficient switching with optimal damping and low spiking. The BUK7Y1R0-40N and BUK7Y3R1-80M N-channel MOSFETs are encapsulated within LFPAK56 packages. The BUK7Y1R0-40N N-channel MOSFET utilizes the Trench 15 low-ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, while the BUK7Y3R1-80M employs the Trench 14 low-ohmic split-gate technology. These N-channel MOSFETs are EU RoHS-compliant and feature a 175°C maximum junction temperature range. Typical applications include motors, lighting, and solenoid control, 12V automotive systems, and ultra-high-performance power switching.

Resultat: 2
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge
Nexperia MOSFET:er BUK7Y1R0-40N/SOT669/LFPAK 345På lager
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Si SMD/SMT Power-SO8-4 N-Channel 1 Channel 40 V 320 A 970 uOhms - 20 V, 20 V 3.6 V 135 nC - 55 C + 175 C 268 W Enhancement
Nexperia MOSFET:er BUK7Y3R1-80M/SOT669/LFPAK
1 498Förväntad 2026-08-03
Min.: 1
Multipla: 1

Si SMD/SMT Power-SO8-4 N-Channel 1 Channel 80 V 160 A 3.1 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 175 C 254 W Enhancement