DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

Resultat: 113
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
Toshiba MOSFET:er Power MOSFET N-Channel 7 454På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er Power MOSFET N-Channel 1 627På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er N-Ch 800V 1400pF 23nC 11.5A 45W 2 143På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ 966På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFET:er DTMOSIV 600V 88mOhm 30.8A 230W 3000pF 60På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er MOSFET NChannel 068ohm DTMOS 6På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 516På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 950 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er MOSFET NCh trr100 nsn 0.25ohm DTMOS 26På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 4.5 V 40 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er Power MOSFET N-Channel 34På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms - 30 V, 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Power MOSFET N-Channel 151På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=80W F=1MHZ 1 788På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7.8 A 670 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er POWER MOSFET TRANSISTOR DTMOS DFN 8x8-OS PD=139W F=1MHZ 2 487På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 245 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er POWER MOSFET TRANSISTOR DTMOS TO-247 PD=211W F=1MHZ 149På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 80 mOhms - 30 V, 30 V 4 V 43 nC + 150 C 211 W Enhancement Tube

Toshiba MOSFET:er Power MOSFET N-Channel 2 356På lager
1 200Förväntad 2026-08-03
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 62 mOhms - 30 V, 30 V 3 V 135 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Pb-F POWER MOSFET TRANSISTOR TO-247 PD=297W F=1MHZ 107På lager
270Förväntad 2026-12-02
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 40 mOhms - 30 V, 30 V 4 V 85 nC + 150 C 297 W Enhancement Tube
Toshiba MOSFET:er POWER MOSFET TRANSISTOR DTMOS TO-247 PD=150W F=1MHZ 135På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 125 mOhms - 30 V, 30 V 4 V 28 nC + 150 C 150 W Enhancement Tube
Toshiba MOSFET:er N-Ch DTMOSIV 600V 240W 3000pF 30.8A 2 281På lager
5 000Förväntad 2026-11-16
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 87 mOhms - 30 V, 30 V 3 V 105 nC + 150 C 240 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er N-Ch 9.7A 100W FET 600V 700pF 20nC 4 513På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.2 A 820 mOhms - 30 V, 30 V 2.7 V 12 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er MOSFET NChannel 0.22ohm DTMOS 12På lager
100Förväntad 2026-11-16
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 3.5 V 35 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er DTMOSIV 600V 45mOhm 61.8A 400W 6500pF 86På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 36 mOhms - 30 V, 30 V 3 V 205 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er DTMOSIV 600V 40mOhm 61.8A 400W 6500pF 10På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 6.2A 30W FET 600V 390pF 12nC 128På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er DTMOSIV 600V 18mOhm 100A 800W 15000pF 40På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PL-3 N-Channel 1 Channel 600 V 100 A 15 mOhms - 30 V, 30 V 3.7 V 360 nC - 55 C + 150 C 797 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Power MOSFET N-Channel 207På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 350 mOhms - 30 V, 30 V 3 V 25 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC 45På lager
150Förväntad 2026-12-04
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube