SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Resultat: 31
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering
ROHM Semiconductor SiC-MOSFET:ar N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1 034På lager
226,06 kr
142,65 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V 72A 339W SIC 30mOhm TO-247N
345På lager
697,76 kr
628,41 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 70A 262W SIC 30mOhm TO-247N
366På lager
467,95 kr
388,50 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 118A 427W SIC 17mOhm TO-247N
351På lager
1 194,39 kr
1 104,60 kr
Min.: 1
Multipla: 1
Through Hole TO-247N-3 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar Nch 1200V 95A SiC TO-247N 495På lager
478,83 kr
408,06 kr
Min.: 1
Multipla: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683På lager
772,49 kr
661,05 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V 55A 262W SIC 40mOhm TO-247N
460På lager
495,65 kr
422,46 kr
410,59 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 95A 427W SIC 22mOhm TO-247N
199På lager
1 252,64 kr
1 168,90 kr
Min.: 1
Multipla: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 24A 134W SIC 105mOhm TO-247N
1 619På lager
202,55 kr
148,04 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 39A 165W SIC 60mOhm TO-247N
428På lager
246,18 kr
171,11 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar Nch 1200V 24A SiC TO-247N 169På lager
185,95 kr
154,96 kr
143,31 kr
140,01 kr
132,76 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 650V 30A 134W SIC 80mOhm TO-247N
366På lager
195,29 kr
139,24 kr
131,99 kr
130,89 kr
Min.: 1
Multipla: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 31A 165W SIC 80mOhm TO-247N
171På lager
256,62 kr
180,24 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 21A 103W SIC 120mOhm TO-247N
450På lager
90,34 kr
60,66 kr
56,60 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar TO247 650V 39A N-CH SIC 704På lager
252,22 kr
163,97 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 55A N-CH SIC 61På lager
508,73 kr
393,55 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 31A N-CH SIC 150På lager
179,80 kr
106,38 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 650V 70A N-CH SIC 195På lager
486,42 kr
372,45 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529På lager
204,52 kr
161,88 kr
140,12 kr
132,54 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87På lager
176,17 kr
135,18 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 1200V 160mO 3rd Gen TO-263-7LA 990På lager
Klipp band
93,52 kr
51,54 kr
48,03 kr
Papprulle
45,39 kr
Min.: 1
Multipla: 1
: 1 000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET 753På lager
Klipp band
91,44 kr
50,33 kr
46,60 kr
Papprulle
44,07 kr
Min.: 1
Multipla: 1
: 1 000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 93A 22mOhm TrenchMOS 198På lager
530,93 kr
400,37 kr
386,19 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 70A 30mOhm TrenchMOS 84På lager
315,96 kr
215,07 kr
210,35 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 39A 60mOhm TrenchMOS 170På lager
900Förväntad 2026-10-29
155,18 kr
88,14 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement