SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Resultat: 31
Välj Bild Artikelnummer
 Tillverk:
Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet.
Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
ROHM Semiconductor SiC-MOSFET:ar N-Ch 1200V SiC 31A 80mOhm TrenchMOS
Datablad
1 090På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 650V 70A 262W SIC 30mOhm TO-247N
Datablad
Produktkommenterarer
366På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 95A 427W SIC 22mOhm TO-247N
Datablad
Produktkommenterarer
199På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 24A 134W SIC 105mOhm TO-247N
Datablad
Produktkommenterarer
1 619På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar N-Ch 1200V SiC 72A 30mOhm TrenchMOS
Datablad
685På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V 55A 262W SIC 40mOhm TO-247N
Datablad
Produktkommenterarer
460På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 72A 339W SIC 30mOhm TO-247N
Datablad
Produktkommenterarer
346På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 17A 103W SIC 160mOhm TO-247N
Datablad
Produktkommenterarer
506På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 118A 427W SIC 17mOhm TO-247N
Datablad
Produktkommenterarer
350På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar TO247 650V 39A N-CH SIC
Datablad
704På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 650V 39A 165W SIC 60mOhm TO-247N
Datablad
Produktkommenterarer
428På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar Nch 1200V 24A SiC TO-247N
Datablad
169På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 650V 30A 134W SIC 80mOhm TO-247N
Datablad
Produktkommenterarer
366På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 21A 103W SIC 120mOhm TO-247N
Datablad
Produktkommenterarer
450På lager
Min.: 1
Multipla: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
Datablad
529På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 55A N-CH SIC
Datablad
61På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 31A N-CH SIC
Datablad
150På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
Datablad
87På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7LA
Datablad
990På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7LA N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET
Datablad
753På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7LA N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 650V 70A N-CH SIC
Datablad
195På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 93A 22mOhm TrenchMOS
Datablad
258På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 70A 30mOhm TrenchMOS
Datablad
84På lager
Min.: 1
Multipla: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 1200V SiC 55A 40mOhm TrenchMOS
Datablad
139På lager
450Förväntad 2027-03-03
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V 30A Silicon Carbide SiC
Datablad
757På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement