GaNEXUS™ GaN FETs

onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high voltages. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.

Results: 21
Select Image Part # Mfr. Description Datasheet Availability Pricing (SEK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Maximum Operating Frequency Technology
onsemi GaN FETs 650V 35MR LGAN TOLL 2 400In Stock
Cut Tape
153,45 kr
91,01 kr
Reel
77,40 kr
Min.: 1
Mult.: 1
: 1 200
SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 21 nC - 55 C + 150 C 367 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V 50MR LGAN TOLL 2 400In Stock
Cut Tape
110,25 kr
61,65 kr
59,18 kr
Reel
50,29 kr
Min.: 1
Mult.: 1
: 1 200
SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.6 nC - 55 C + 150 C 250 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 75MR TYP 100MR MAX LGAN IN TO252/DPAK 1 932In Stock
Cut Tape
31,50 kr
20,48 kr
14,18 kr
11,81 kr
10,94 kr
Reel
10,26 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DPAK-3 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 105 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 75MR TYP 100MR MAX LGAN IN DFN 8X8 1 954In Stock
Cut Tape
34,20 kr
22,28 kr
15,53 kr
13,05 kr
12,15 kr
Reel
11,36 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 111 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 101MR TYP 130MR MAX LGAN IN DFN 8X8 1 970In Stock
Cut Tape
31,16 kr
20,25 kr
13,95 kr
11,59 kr
10,74 kr
Reel
10,16 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 16 A 130 mOhms - 6 V, + 7 V 2.5 V 2.65 nC - 55 C + 150 C 84 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 132MR TYP 170MR MAX LGAN IN DFN 8X8 2 500In Stock
Cut Tape
16,99 kr
11,36 kr
9,50 kr
9,18 kr
Reel
8,87 kr
8,57 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 69 W Enhancement GaNEXUS GaN
onsemi GaN FETs 100V 2.5MR LGAN IN 3.3X3.3 LGA DUAL COOL 1 750In Stock
Cut Tape
60,19 kr
39,49 kr
29,03 kr
25,88 kr
22,84 kr
Reel
22,84 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 183 A 2.7 mOhms - 4 V to 6 V 2.1 V 7.3 nC - 40 C + 150 C 250 W Enhancement GaNEXUS GaN
onsemi GaN FETs 100V 5MR LGAN IN 3.3X3.3 LGA DUAL COOL 1 741In Stock
Cut Tape
44,89 kr
29,36 kr
21,94 kr
18,34 kr
17,10 kr
Reel
15,98 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 146 A 3.8 mOhms - 4 V to 6 V 5.2 nC - 40 C + 150 C 208 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 132MR TYP 170MR MAX LGAN IN TO252/DPAK 1 983In Stock
Cut Tape
14,06 kr
9,27 kr
7,72 kr
7,43 kr
7,40 kr
Reel
6,92 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PDSO-E3 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 64 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V 35MR LGAN TOLT
2 400Expected 2026-12-11
Cut Tape
146,70 kr
86,51 kr
Reel
81,23 kr
Min.: 1
Mult.: 1
: 1 200
SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 16 nC - 55 C + 150 C 462 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS SMART, 650V, 19m, TOLL
1 200Expected 2026-11-16
Cut Tape
171,34 kr
127,35 kr
118,46 kr
110,59 kr
Reel
110,59 kr
Min.: 1
Mult.: 1
: 2 400
SMD/SMT PDSO-F9 N-Channel 1 Channel 650 V 75 A 25 mOhms 10 V to 24 V + 150 C Enhancement GaNEXUS 2 MHz GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS SMART, 650V, 19m, TOLT
1 200Expected 2026-11-16
Cut Tape
171,34 kr
127,35 kr
118,46 kr
110,59 kr
Reel
110,59 kr
Min.: 1
Mult.: 1
: 2 400
SMD/SMT PDSO-G16 N-Channel 1 Channel 650 V 75 A 25 mOhms 10 V to 24 V + 150 C Enhancement GaNEXUS 2 MHz GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 40V, 0.5m, 5x6 Dual Cool
1 250Expected 2026-11-17
Cut Tape
65,36 kr
34,76 kr
34,65 kr
Reel
34,65 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PDSO-N8 N-Channel 1 Channel 40 V 819 A 0.7 mOhms - 4 V to 6 V 1.2 V 52 nC - 40 C + 150 C 962 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 100V, 1.1m, 5x6 Dual Cool
1 250Expected 2026-11-17
Cut Tape
77,18 kr
41,74 kr
38,25 kr
37,01 kr
34,65 kr
Reel
34,65 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PDSO-N8 N-Channel 1 Channel 100 V 474 A 1.5 mOhms - 4 V to 6 V 1.1 V 19 nC - 55 C + 150 C 658 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 150V, 1.6m, 5x6 Dual Cool
1 250Expected 2026-11-17
Cut Tape
99,23 kr
55,13 kr
48,38 kr
Reel
48,38 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PDSO-N8 N-Channel 1 Channel 150 V 2.2 mOhms - 4 V to 6 V 1.1 V 34 nC - 55 C + 150 C Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 100V, 1.9m, 5x6 Dual Cool
1 250Expected 2026-11-17
Cut Tape
65,36 kr
34,76 kr
31,73 kr
29,59 kr
27,68 kr
Reel
27,68 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PDSO-N8 N-Channel 1 Channel 100 V 275 A 2.5 mOhms - 4 V to 6 V 1.2 V 11 nC - 55 C + 150 C 378 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 200V, 2.6m, 5x6 Dual Cool
1 250Expected 2026-11-17
Cut Tape
99,23 kr
55,13 kr
48,38 kr
Reel
48,38 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PDSO-N8 N-Channel 1 Channel 200 V 3.6 mOhms - 4 V to 6 V 1.1 V 30 nC - 55 C + 150 C Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 100V, 0.8m, 5x6 Dual Cool
1 250Expected 2027-11-11
Cut Tape
88,54 kr
60,53 kr
49,95 kr
44,44 kr
41,51 kr
Reel
41,51 kr
Min.: 1
Mult.: 1
: 2 500
SMD/SMT PDSO-N8 N-Channel 1 Channel 100 V 1 mOhms - 4 V to 6 V 1.1 V 39 nC - 55 C + 150 C Enhancement GaNEXUS GaN
onsemi GaN FETs GaNEXUS SMART, 650V, 42m, TOLL
1 200Expected 2026-12-11
Cut Tape
114,30 kr
82,58 kr
68,85 kr
61,31 kr
Reel
52,20 kr
Min.: 1
Mult.: 1
: 1 200
SMD/SMT PDSO-F9 N-Channel 1 Channel 650 V 54 A 55 mOhms 22 V + 150 C 271 W Enhancement GaNEXUS 2 MHz GaN
onsemi GaN FETs GaNEXUS SMART, 650V, 42m, TOLT
1 200Expected 2027-01-11
Cut Tape
105,41 kr
76,39 kr
65,70 kr
61,43 kr
Reel
57,38 kr
Min.: 1
Mult.: 1
: 1 200
SMD/SMT PDSO-G16 N-Channel 1 Channel 650 V 54 A 55 mOhms 22 V + 150 C 338 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V 50MR LGAN TOLT
2 400Expected 2026-12-08
Cut Tape
105,64 kr
68,85 kr
60,19 kr
56,14 kr
Reel
51,86 kr
Min.: 1
Mult.: 1
: 1 200
SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.9 nC - 55 C + 150 C 312 W Enhancement GaNEXUS GaN