MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

Resultat: 21
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering Handelsnamn Förpackning
STMicroelectronics MOSFET:er N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 459På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 95 A 23 mOhms 30 V 4.2 V 230 nC - 55 C + 150 C 463 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 532På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 45 mOhms 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET 894På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 56 A 43 mOhms 30 V 4.5 V 78.6 nC - 55 C + 150 C 245 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package 88På lager
3 000Förväntad 2026-10-23
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-4 N-Channel 1 Channel 650 V 55 A 35 mOhms 30 V 4.5 V 107 nC - 55 C + 150 C 167 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package 201På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-4 N-Channel 1 Channel 650 V 44 A 65 mOhms 30 V 4.5 V 78 nC - 55 C + 150 C 223 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads 266På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 35 mOhms 30 V 4.2 V 112 nC - 55 C + 150 C 321 mW Enhancement Tube
STMicroelectronics MOSFET:er N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET 2 789På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 58 A 44 mOhms 30 V 4.2 V 110 nC - 55 C + 150 C 166 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET 994På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 51 A 50 mOhms 30 V 4.5 V 100 nC - 50 C + 150 C 266 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET:er N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET 150På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-5 N-Channel 600 V 39 A 65 mOhms 30 V 4.5 V 66 nC - 55 C + 150 C 202 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 247På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 95 A 30 V 4.2 V 230 nC - 55 C + 150 C Enhancement Tube
STMicroelectronics MOSFET:er N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET 49På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 56 A 43 mOhms 30 V 4.5 V 78.6 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 250 V, 14 mOhm typ., 54 A MDmesh M9 Power MOSFET in a D2PAK package 42På lager
1 000På beställningen
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 N-Channel 1 Channel 250 V 56 A 18 mOhms 30 V 4.2 V 85 nC - 55 C + 150 C 320 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET 303På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 17 A 160 mOhms 30 V 4.2 V 32 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET 480På lager
1 000Förväntad 2027-01-29
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 55 A 45 mOhms 30 V 4.2 V 80 nC - 55 C + 150 C 245 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 1På lager
1 200Förväntad 2027-08-13
Min.: 1
Multipla: 1

Si Through Hole N-Channel 1 Channel 650 V 54 A 45 mOhms 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET:er Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
1 801Förväntad 2027-09-24
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 600 V 27 A 99 mOhms 30 V 4.5 V 44 nC - 55 C + 150 C 179 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er Automotive-grade N-channel 600 V, 37 mOhm typ., 54 A MDmesh DM9 Power MOSFET
600Förväntad 2027-01-29
Min.: 1
Multipla: 1
Max.: 50
: 600

Si SMD/SMT HU3PAK-7 N-Channel 1 Channel 600 V 54 A 46 mOhms 30 V 4.5 V 77 nC - 55 C + 150 C 245 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET:er Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
1 200Förväntad 2027-02-05
Min.: 1
Multipla: 1
: 600

Si SMD/SMT HU3PAK-7 N-Channel 1 Channel 650 V 51 A 50 mOhms 30 V 4.5 V 100 nC - 55 C + 150 C 245 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics STO60N030M9
STMicroelectronics MOSFET:er N-channel 600 V, 23 mOhm typ., 79 A MDmesh M9 Power MOSFET in a TO-LL package
1 800På beställningen
Min.: 1
Multipla: 1
: 1 800

Reel, Cut Tape
STMicroelectronics STO60N045DM9
STMicroelectronics MOSFET:er N-channel 600 V, 39 mOhm typ., 55 A, MDmesh DM9 Power MOSFET in a TO-LL package
1 800Förväntad 2026-10-16
Min.: 1
Multipla: 1
: 1 800

Reel, Cut Tape
STMicroelectronics MOSFET:er N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET
497Förväntad 2027-01-29
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 150 mOhms 30 V 3.2 V 32 nC - 55 C + 150 C 140 W Enhancement Tube