Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Antal RoHS ECAD-modell Typ
Minnesstorlek
Databussbredd
Maximal klockfrekvens
Paket/låda
Organisation
Åtkomsttid
Minimal matningsspänning
Maximal matningsspänning
Minsta drifttemperatur
Maximal drifttemperatur
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datablad
88På lager
Min.: 1
Multipla: 1
Max.: 1

PSRAM (Pseudo SRAM) 32 Mbit 8 bit 104 MHz SOIC-8 4 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 419På lager
Min.: 1
Multipla: 1
Max.: 7

SDRAM 64 Mbit 200 MHz TFBGA-24 2.7 V 3.6 V
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Datablad
885På lager
Min.: 1
Multipla: 1
Max.: 37

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz TFBGA-24 8 M x 8 5 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Datablad
656På lager
Min.: 1
Multipla: 1
Max.: 121

HyperRAM 64 Mbit 8 bit 200 MHz TFBGA-24 8 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Datablad
1 887På lager
Min.: 1
Multipla: 1
Max.: 200

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 166 MHz TFBGA-24 8 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datablad
817På lager
Min.: 1
Multipla: 1
Max.: 353

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datablad
174På lager
Min.: 1
Multipla: 1
Max.: 13

PSRAM (Pseudo SRAM) 32 Mbit 8 bit 104 MHz SOIC-8 4 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Datablad
467På lager
Min.: 1
Multipla: 1
Max.: 32

HyperRAM 64 Mbit 8 bit 166 MHz TFBGA-24 8 M x 8 36 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 64 Mbit 200 MHz TFBGA-24 1.65 V 1.95 V
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datablad
148På lager
Min.: 1
Multipla: 1
Max.: 24

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C
ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datablad
159På lager
Min.: 1
Multipla: 1
Max.: 15

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8
Datablad
198Förväntad 2026-04-24
Min.: 1
Multipla: 1
Max.: 66

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C