FF8MR12W1M1HB11BPSA1

Infineon Technologies
726-FF8MR12W1M1HB11B
FF8MR12W1M1HB11BPSA1

Tillverk:

Beskrivning:
Åtskilda halvledaremoduler CoolSiC MOSFET half-bridge module 1200 V

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 402

Lager:
402 Kan skickas omedelbart
Fabrikens ledtid:
10 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Denna produkt levereras UTAN KOSTNAD

Prissättning (SEK)

Antal Enhetspris
Ext. pris
1.053,70 kr 1.053,70 kr
885,19 kr 8.851,90 kr
797,77 kr 95.732,40 kr

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: Åtskilda halvledaremoduler
RoHS-direktivet:  
Half Bridge
Si
Tray
Märke: Infineon Technologies
Produkttyp: Discrete Semiconductor Modules
Fabriksförpackningskvantitet: 24
Underkategori: Discrete and Power Modules
Handelsnamn: EasyDUAL
Del # Alias: FF8MR12W1M1H_B11 SP005634498
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Attribut som valts: 0

TARIC:
8541210000
CNHTS:
8504409100
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

Reliable & Efficient Power Supply for Data Centers

Infineon Technologies Reliable and Efficient Power Supply for Data Centers are scalable solutions with power ratings from approximately 5kW to 50/60kW. This Infineon solution is ideal for uninterruptible power supplies (UPS) that require high power density and energy efficiency. These modules leverage various chip technologies, including Si IGBT, CoolSiC™ hybrid, and CoolSiC MOSFET, to meet diverse requirements for cost-effectiveness and performance. Infineon's portfolio addresses all system levels of a UPS with different voltage classes, and are set to expand offerings to include lower power rating classes.

EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.