HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
Förpackning

IXYS MOSFET:er 12 Amps 1000V
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1 382På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12 A 1.05 Ohms - 20 V, 20 V 3.5 V 80 nC - 55 C + 150 C 463 W Enhancement HiPerFET Tube

IXYS MOSFET:er 140 Amps 100V 0.011 Rds
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1 276På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 140 A 11 mOhms - 20 V, 20 V 5 V 155 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET:er Q3Class HiPerFET Pwr MOSFET 1000V/15A
Datablad
199På lager
300Förväntad 2026-11-16
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 1.05 Ohms - 30 V, 30 V 6.5 V 64 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFET:er 1
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280På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 16 A 950 mOhms - 30 V, 30 V 3.5 V 120 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube

IXYS MOSFET:er 250V/170A Ultra Junc tion X3-Class MOSFE
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139På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 170 A 6.1 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFET:er 20 Amps 1000V 1 Rds
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277På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 20 A 570 mOhms - 30 V, 30 V 6.5 V 126 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube

IXYS MOSFET:er Polar3 HiPerFET Power MOSFET
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1 331På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 26 A 240 mOhms - 30 V, 30 V 5 V 42 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFET:er 500V 30A
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77På lager
2 550Förväntad 2026-04-28
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 30 A 200 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube

IXYS MOSFET:er Q3Class HiPerFET Pwr MOSFET 500V/30A
Datablad
490På lager
180Förväntad 2026-07-27
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 30 A 200 mOhms - 30 V, 30 V 3.5 V 62 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFET:er TRENCHT2 HIPERFET PWR MOSFET 100V 320A
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1 167På lager
780Förväntad 2026-04-10
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Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 320 A 3.5 mOhms - 20 V, 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube

IXYS MOSFET:er TRENCHT2 HIPERFET PWR MOSFET 75V 340A
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1 481På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 340 A 3.2 mOhms - 20 V, 20 V 4 V 300 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube

IXYS MOSFET:er Polar3 HiPerFET Power MOSFET
Datablad
280På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 500 V 34 A 180 mOhms HiPerFET Tube

IXYS MOSFET:er 500V 36A
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274På lager
300Förväntad 2026-09-23
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 36 A 170 mOhms - 30 V, 30 V 3 V 93 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET:er 500V 44A
Datablad
228På lager
300Förväntad 2026-06-16
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 44 A 140 mOhms - 30 V, 30 V 3 V 98 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube

IXYS MOSFET:er 600V 50A 0.145Ohm PolarP3 Power MOSFET
Datablad
475På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 145 mOhms - 30 V, 30 V 5 V 94 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube

IXYS MOSFET:er 850V Ultra Junction X-Class Pwr MOSFET
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270På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET:er 69 Amps 300V 0.049 Rds
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164På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 69 A 49 mOhms - 20 V, 20 V 5 V 156 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFET:er MOSFET 650V/80A Ultra Junction X2
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851På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 40 mOhms - 30 V, 30 V 2.7 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET:er MOSFET 650V/100A Ultra Junction X2
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534På lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET:er 120 Amps 200V 0.022 Rds
Datablad
389På lager
1 450På beställningen
Min.: 1
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Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 120 A 22 mOhms - 20 V, 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFET:er 140 Amps 300V 0.024 Ohms Rds
Datablad
639På lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 140 A 24 mOhms - 20 V, 20 V 3 V 185 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET:er PolarHT HiperFET 100v, 170A
Datablad
1 398På lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFET:er 200 Amps 100V 0.0075 Rds
Datablad
123På lager
Min.: 1
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Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 200 A 7.5 mOhms - 20 V, 20 V 5 V 235 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO264 300V 210A N-CH X3CLASS
Datablad
207På lager
450Förväntad 2026-05-13
Min.: 1
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Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 210 A 5.5 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET:er Q3Class HiPerFET Pwr MOSFET 1000V/24A
Datablad
130På lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 24 A 440 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube