HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
Förpackning
IXYS MOSFET:er 160Amps 40V
Datablad
37På lager
Min.: 1
Multipla: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 40 V 160 A 5 mOhms - 20 V, 20 V 4 V 79 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFET:er 230 Amps 75V
Datablad
123På lager
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er 300 Amps 40V
Datablad
414På lager
150Förväntad 2026-04-03
Min.: 1
Multipla: 1
Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 300 A 2.5 mOhms - 20 V, 20 V 2 V 145 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO263 650V 4A N-CH X2CLASS
Datablad
101På lager
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 4 A 850 mOhms - 30 V, 30 V 3 V 8.3 nC - 55 C + 150 C 80 W Enhancement HiPerFET Tube
IXYS MOSFET:er 60 Amps 100V 18.0 Rds
Datablad
146På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 60 A 18 mOhms - 20 V, 20 V 2.5 V 49 nC - 55 C + 175 C 176 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO263 650V 8A N-CH X2CLASS
Datablad
232På lager
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFET:er 90 Amps 75V 0.01 Rds
Datablad
50På lager
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 75 V 90 A 10 mOhms - 20 V, 20 V 2 V 54 nC - 55 C + 175 C 180 W Enhancement HiPerFET Tube

IXYS MOSFET:er 130Amps 200V
Datablad
240På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 130 A 16 mOhms - 30 V, 30 V 5 V 150 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFET:er 160 Amps 100V 6.9 Rds
Datablad
96På lager
300Förväntad 2026-03-25
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 160 A 5.8 mOhms - 30 V, 30 V 2.5 V 132 nC - 55 C + 175 C 430 W Enhancement HiPerFET Tube

IXYS MOSFET:er 180 Amps 100V 6.1 Rds
Datablad
73På lager
1 080Förväntad 2026-04-17
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 180 A 6.4 mOhms - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFET:er TRENCHT2 PWR MOSFET 55V 260A
Datablad
104På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 55 V 260 A 3.3 mOhms - 20 V, 20 V 2 V 140 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er 110 Amps 55V 0.0066 Rds
Datablad
139På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 110 A 6.6 mOhms - 20 V, 20 V 2 V 57 nC - 55 C + 175 C 180 W Enhancement HiPerFET Tube
IXYS MOSFET:er 120 Amps 75V
Datablad
281På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 120 A 7.7 mOhms - 20 V, 20 V 4 V 78 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFET:er 170 Amps 75V
Datablad
322På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 170 A 5.4 mOhms - 20 V, 20 V 4 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFET:er 220 Amps 40V 0.0035 Rds
Datablad
250På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 220 A 3.5 mOhms - 20 V, 20 V 2 V 112 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFET:er 230 Amps 75V
Datablad
184På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 650V 24A N-CH X2CLASS
Datablad
42På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 145 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 650V 2A N-CH X2CLASS
Datablad
220På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 2 A 2.3 Ohms - 30 V, 30 V 3 V 4.3 nC - 55 C + 150 C 55 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 650V 34A N-CH X2CLASS
Datablad
208På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET:er 44 Amps 100V 25.0 Rds
Datablad
847På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 44 A 30 mOhms - 20 V, 20 V 2.5 V 27.4 nC - 55 C + 175 C 130 W Enhancement HiPerFET Tube
IXYS MOSFET:er 48 Amps 200V 50 Rds
Datablad
150På lager
300Förväntad 2026-03-27
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 48 A 50 mOhms - 30 V, 30 V 2.5 V 60 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 650V 4A N-CH X2CLASS
Datablad
295På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 4 A 850 mOhms - 30 V, 30 V 3 V 8.3 nC - 55 C + 150 C 80 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 700V 4A N-CH X4CLASS
Datablad
95På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 4 A 850 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 30 W Enhancement HiPerFET Tube
IXYS MOSFET:er 50 Amps 250V 50 Rds
Datablad
235På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 50 A 60 mOhms - 30 V, 30 V 3 V 78 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFET:er MOSFET Id60 BVdass100
Datablad
40På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 60 A 18 mOhms - 20 V, 20 V 2.5 V 49 nC - 55 C + 175 C 176 W Enhancement HiPerFET Tube