HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
Förpackning
IXYS MOSFET:er Polar3 HiPerFET Power MOSFET
Datablad
260På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 16 A 360 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 330 W Enhancement HiPerFET Tube
IXYS MOSFET:er 650V/22A OVERMOLDED TO-220
Datablad
263På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 145 mOhms - 30 V, 30 V 3.5 V 37 nC - 55 C + 150 C 37 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 300V 26A N-CH X3CLASS
Datablad
39På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 26 A 66 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET:er 650V/34A Ultra Junction X2-Class
Datablad
203På lager
300Förväntad 2026-03-27
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET:er 650V/34A OVERMOLDED TO-220
Datablad
194På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 100 mOhms - 30 V, 30 V 3.5 V 56 nC - 55 C + 150 C 40 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 200V 36A N-CH X3CLASS
Datablad
100På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 36 A 45 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 300V 38A N-CH X3CLASS
Datablad
234På lager
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 38 A 50 mOhms - 20 V, 20 V 4.5 V 35 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 300V 38A N-CH X3CLASS
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230På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 38 A 50 mOhms - 20 V, 20 V 2.5 V 35 nC - 55 C + 150 C 34 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 1KV 4A N-CH POLAR
Datablad
417På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 1 kV 2.1 A 3.3 Ohms - 20 V, 20 V 3 V 26 nC - 55 C + 150 C 40 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO220 300V 56A N-CH X3CLASS
Datablad
41På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube
IXYS MOSFET:er 5 Amps 1000V
Datablad
362På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 5 A 2.8 Ohms - 30 V, 30 V 3 V 33.4 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFET:er 250V/60A Ultra Junct ion X3-Class MOSFET
Datablad
229På lager
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 60 A 19 mOhms - 20 V, 20 V 2.5 V 50 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET:er 250V/60A Ultra Junct ion X3-Class MOSFET
Datablad
206På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 60 A 19 mOhms - 20 V, 20 V 2.5 V 50 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET:er 7 Amps 800V 1.44 Rds
Datablad
89På lager
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 1.44 Ohms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFET:er 250V/80A Ultra Junct ion X3-Class MOSFET
Datablad
210På lager
300Förväntad 2026-09-30
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 80 A 13 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO3P 250V 120A N-CH X3CLASS
Datablad
10På lager
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Si Through Hole TO-3P N-Channel 1 Channel 250 V 120 A 12 mOhms - 20 V, 20 V 2.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube

IXYS MOSFET:er 75 Amps 200V 0.018 Rds
Datablad
48På lager
300Förväntad 2026-03-11
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 90 A 22 mOhms - 20 V, 20 V 5 V 240 nC - 55 C + 175 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET:er Q3Class HiPerFET Pwr MOSFET 1000V/15A
Datablad
43På lager
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Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 15 A 1.05 Ohms - 30 V, 30 V 3.5 V 64 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO268 200V 220A N-CH X3CLASS
Datablad
28På lager
300Förväntad 2026-06-02
Min.: 1
Multipla: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 220 A 6.2 mOhms - 20 V, 20 V 2.5 V 204 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET:er 600V 50A 0.145Ohm PolarP3 Power MOSFET
Datablad
7På lager
300Förväntad 2026-11-10
Min.: 1
Multipla: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 600 V 50 A 145 mOhms - 30 V, 30 V 5 V 94 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET:er N-Channel: Power MOSFET w/Fast Diode
Datablad
1På lager
810Förväntad 2026-07-16
Min.: 1
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Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 94 A 36 mOhms - 20 V, 20 V 3 V 102 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET:er 96 Amps 200V 0.024 Rds
Datablad
168På lager
510Förväntad 2026-03-11
Min.: 1
Multipla: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET:er TRENCHT2 HIPERFET PWR MOSFET 75V 520A
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27På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 520 A 2.2 mOhms - 20 V, 20 V 5 V 545 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET:er 102 Amps 150V 18 Rds
Datablad
261På lager
Min.: 1
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 102 A 18 mOhms - 20 V, 20 V 5 V 87 nC - 55 C + 175 C 455 W Enhancement HiPerFET Tube
IXYS MOSFET:er 110 Amps 55V 0.0066 Rds
Datablad
229På lager
Min.: 1
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Si SMD/SMT TO-263-3 N-Channel 1 Channel 55 V 110 A 6.6 mOhms - 20 V, 20 V 2 V 57 nC - 55 C + 175 C 180 W Enhancement HiPerFET Tube