HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
Förpackning

IXYS MOSFET:er 16 Amps 800V 0.6 Rds
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73På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 16 A 600 mOhms - 30 V, 30 V 5 V 71 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO247 200V 180A N-CH X3CLASS
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95På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 180 A 7.5 mOhms - 20 V, 20 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube

IXYS MOSFET:er 600V 18A
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16På lager
870Förväntad 2026-04-17
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 400 mOhms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFET:er Polar3 HiPerFET Power MOSFET
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116På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFET:er 20 Amps 800V 0.52 Rds
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186På lager
90Förväntad 2026-06-08
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Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 20 A 520 mOhms - 30 V, 30 V 5 V 86 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFET:er MOSFET 650V/22A Ultra Junction X2
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185På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFET:er DIODE Id24 BVdass800
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20På lager
1 110Förväntad 2026-07-13
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Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 24 A 400 mOhms - 30 V, 30 V 3 V 105 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube

IXYS MOSFET:er 600V 28A 0.26Ohm PolarP3 Power MOSFET
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311På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 28 A 260 mOhms - 30 V, 30 V 5 V 50 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube

IXYS MOSFET:er 500V 30A
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167På lager
2 550Förväntad 2026-04-28
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 30 A 200 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube

IXYS MOSFET:er 500V 36A
Datablad
274På lager
300Förväntad 2026-09-23
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 36 A 170 mOhms - 30 V, 30 V 3 V 93 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET:er 600V 36A
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186På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 36 A 190 mOhms - 30 V, 30 V 3 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube

IXYS MOSFET:er Q3Class HiPerFET Pwr MOSFET 500V/44A
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12På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 44 A 140 mOhms - 30 V, 30 V 3.5 V 93 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFET:er Q3Class HiPerFET Pwr MOSFET 300V/50A
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51På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 50 A 80 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO247 300V 56A N-CH X3CLASS
Datablad
39På lager
90Förväntad 2026-02-16
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFET:er 500V 60A 0.1Ohm PolarP3 Power MOSFET
Datablad
158På lager
3 810Förväntad 2026-05-13
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube

IXYS MOSFET:er POLAR HIPERFET WITH REDUCED RDS 1200V 6A
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188På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube

IXYS MOSFET:er N-Channel: Power MOSFET w/Fast Diode
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1På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 94 A 36 mOhms - 20 V, 20 V 3 V 102 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET:er 180A 250V
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52På lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 180 A 12.9 mOhms - 20 V, 20 V 5 V 345 nC - 55 C + 150 C 1.39 kW Enhancement HiPerFET Tube
IXYS MOSFET:er Q3Class HiPerFET Pwr MOSFET 500V/64A
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53På lager
200Förväntad 2026-07-02
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Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 3.5 V 145 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET:er 500V 78A 0.068Ohm PolarP3 Power MOSFET
Datablad
5På lager
300Förväntad 2026-10-13
Min.: 1
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Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 78 A 68 mOhms - 30 V, 30 V 5 V 147 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET:er HiPERFET Id10 BVdass600
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224På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 740 mOhms - 30 V, 30 V - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFET:er Trench T2 HiperFET Power MOSFET
Datablad
300På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 110 A 11 mOhms - 20 V, 20 V 4.5 V 150 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er HiPERFET Id12 BVdass500
Datablad
2På lager
100Förväntad 2026-03-18
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Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12 A 500 mOhms - 30 V, 30 V - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFET:er 650V/12A TO-220
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172På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFET:er 850V/14A UlJun XCl
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19På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube