Resultat: 36
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
STMicroelectronics MOSFET:er N-Ch 650V 0.168 Ohm 18A Mdmesh V 959På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 190 mOhms - 25 V, 25 V 4 V 36 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS 661På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 330 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 550V 0.18 Ohm 13A Mdmesh M5 2 043På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 550 V 13 A 240 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er POWER MOSFET N-CH 650V 1 671På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8.5 A 430 mOhms - 25 V, 25 V 4 V 20 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.056 Ohm 42 A MDmesh M5 1 721På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.076 Ohm 30 A MDmesh M5 1 718På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650 Volt 33 Amp 505På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.124 Ohm 22 A MDmesh V 728På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 148 mOhms - 25 V, 25 V 3 V 45 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.024 Ohm 84A MDMesh M5 4 838På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 84 A 29 mOhms - 25 V, 25 V 3 V 204 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-CH 65V 12A MDMESH 5 782På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 279 mOhms - 25 V, 25 V 4 V 31 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.076 Ohm 30 A MDmesh M5 1 958På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS 1 000På lager
2 550På beställningen
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 3 V 82 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.056 Ohm 42 A MDmesh M5 1 372På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS 253På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 79 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 650 V MDMesh 558På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 125 mOhms - 25 V, 25 V 3 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.098 Ohm 29 A MDmesh M5 1 205På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18.3 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650 Volt 33 Amp 281På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650 V 0.124 Ohm 22 A MDmesh M5 1 800På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms - 25 V, 25 V 3 V 45 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS 222På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 3 V 82 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.056 Ohm 42 A MDmesh M5 326På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS 881På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9 A 480 mOhms - 25 V, 25 V 3 V 17 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.124 Ohm 22 A MDmesh 209På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms 30 W MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.076 Ohm 30 A MDmesh M5 400På lager
1 000Förväntad 2027-03-19
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.198 Ohm 15A MDmesh FET 556På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 9.4 A 220 mOhms - 25 V, 25 V 5 V 31 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er POWER MOSFET N-CH 650V 22 A 10På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 139 mOhms - 25 V, 25 V 5 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube