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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning

STMicroelectronics MOSFET:er N-Ch 650 Volt 33 Amp
Datablad
528På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er POWER MOSFET N-CH 650V
Datablad
1 671På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8.5 A 430 mOhms - 25 V, 25 V 4 V 20 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.098 Ohm 29 A MDmesh M5
Datablad
1 205På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18.3 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Datablad
1 851På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-CH 65V 12A MDMESH
Datablad
8 291På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 279 mOhms - 25 V, 25 V 4 V 31 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS
Datablad
338På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 79 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 550V 0.18 Ohm 13A Mdmesh M5
Datablad
2 046På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 550 V 13 A 240 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Datablad
486På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.168 Ohm 18A Mdmesh V
Datablad
969På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 190 mOhms - 25 V, 25 V 4 V 36 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Datablad
450På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 650 V MDMesh
Datablad
658På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 125 mOhms - 25 V, 25 V 3 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS
Datablad
688På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 330 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.124 Ohm 22 A MDmesh V
Datablad
739På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 148 mOhms - 25 V, 25 V 3 V 45 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.024 Ohm 84A MDMesh M5
Datablad
4 278På lager
600Förväntad 2026-06-15
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 84 A 29 mOhms - 25 V, 25 V 3 V 204 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
Datablad
951På lager
1 800På beställningen
Min.: 1
Multipla: 1

Si Through Hole Max247-3 N-Channel 1 Channel 650 V 138 A 15 mOhms - 25 V, 25 V 4 V 414 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-ch 650 V 0.168 Ohm 18 A MDmesh M5
Datablad
4 738På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 190 mOhms - 25 V, 25 V 4 V 36 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Datablad
1 958På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
Datablad
2 946På lager
1 000Förväntad 2026-07-06
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 3 V 82 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Datablad
1 976På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650 Volt 33 Amp
Datablad
436På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er POWER MOSFET N-CH 650V 22 A
Datablad
615På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 139 mOhms - 25 V, 25 V 5 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Datablad
1 823På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS
Datablad
984På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9 A 480 mOhms - 25 V, 25 V 3 V 17 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650V 0.124 Ohm 22 A MDmesh
Datablad
129På lager
1 000Förväntad 2026-07-20
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms 30 W MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 650 Volt 12 Amp
Datablad
375På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 299 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube