NTBL045N065SC1

onsemi
863-NTBL045N065SC1
NTBL045N065SC1

Tillverk:

Beskrivning:
SiC-MOSFET:ar SIC MOS TOLL 650V

ECAD-modell:
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På lager: 1 374

Lager:
1 374 Kan skickas omedelbart
Fabrikens ledtid:
20 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Partier som är större än 1374 kommer att omfattas av ett krav på minimibeställning.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
116,41 kr 116,41 kr
73,90 kr 739,00 kr
72,27 kr 7.227,00 kr
67,47 kr 67.470,00 kr
Komplett Papprulle (beställ i multiplar av 2000)
61,37 kr 122.740,00 kr

Produktattribut Attributvärde Välj attribut
onsemi
Produktkategori: SiC-MOSFET:ar
RoHS-direktivet:  
REACH - SVHC:
SMD/SMT
PSOF-8
N-Channel
1 Channel
650 V
73 A
50 mOhms
- 8 V, + 22 V
4.3 V
105 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC
Märke: onsemi
Konfiguration: Single
Falltid: 7 ns
Transkonduktans framåt - Min: 16 S
Förpackning: Reel
Förpackning: Cut Tape
Produkttyp: SiC MOSFETS
Stigtid: 14 ns
Serie: NTBL045N065SC1
Fabriksförpackningskvantitet: 2000
Underkategori: Transistors
Teknologi: SiC
Typisk fördröjningstid vid avstängning: 26 ns
Typisk fördröjningstid vid påslagning: 13 ns
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Attribut som valts: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

NTBL045N065SC1 33mohm Silicon Carbide MOSFET

onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET is housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

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M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

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onsemi Cloud Power Management Solutions offers computing and connectivity essential for infrastructure. onsemi Cloud Power Management Solutions' power is critical for processors, memory banks, and wireless base stations. As operations shift to the Cloud, the importance of efficiency and reliability grows. AI servers, in particular, require a reliable power source to ensure optimal performance and efficiency, making solutions crucial for maintaining the integrity and functionality of AI-driven operations. onsemi provides diverse solutions for AC-DC conversion, multiphase conversion, point-of-load supplies, and hot-swap protection to support various power needs in cloud infrastructure. Cutting-edge technology, dependable performance, and deep application expertise make onsemi an ideal partner for powering data in today’s environment, whether in base stations, servers, or data centers.