NCV57001DWR2G

onsemi
863-NCV57001DWR2G
NCV57001DWR2G

Tillverk:

Beskrivning:
Galvaniserade isolerade gatedrivkretsar IGBT gate driver

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 8 270

Lager:
8 270 Kan skickas omedelbart
Fabrikens ledtid:
21 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Förpackning:
Komplett Papprulle (beställ i multiplar av 1000)

Prissättning (SEK)

Antal Enhetspris
Ext. pris
Skärtejp/MouseReel™
56,35 kr 56,35 kr
39,13 kr 391,30 kr
35,86 kr 896,50 kr
28,45 kr 2.845,00 kr
27,25 kr 6.812,50 kr
25,83 kr 12.915,00 kr
Komplett Papprulle (beställ i multiplar av 1000)
24,20 kr 24.200,00 kr
† 58,00 kr MouseReel™-avgiften kommer att läggas till och beräknas i din kundvagn. MouseReel™-beställningar kan inte avbeställas eller returneras.

Produktattribut Attributvärde Välj attribut
onsemi
Produktkategori: Galvaniserade isolerade gatedrivkretsar
RoHS-direktivet:  
NCV57001
SMD/SMT
SOIC-16
- 40 C
+ 125 C
1.4 W
90 ns
10 ns
15 ns
AEC-Q100
Reel
Cut Tape
MouseReel
Märke: onsemi
Konfiguration: Inverting, Non-Inverting
Maximal förseningstid vid avstängning: 90 ns
Maximal förseningstid vid påslagning: 90 ns
Antal drivenheter: 1 Driver
Antal utgångar: 1 Output
Arbetsström: 4.8 mA
Utgångsström: 4 A
Produkt: IGBT, MOSFET Gate Drivers
Produkttyp: Galvanically Isolated Gate Drivers
Fabriksförpackningskvantitet: 1000
Underkategori: PMIC - Power Management ICs
Maximal matningsspänning: 5 V
Minimal matningsspänning: 3.3 V
Hittade produkter:
Markera minst en kryssruta för att visa liknande produkter
Markera minst en kryssruta ovan för att visa liknande produkter i denna kategori.
Attribut som valts: 0

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

Galvanically Isolated High Current Gate Drivers

onsemi Galvanically Isolated High Current Gate Drivers offer high transient and electromagnetic immunity. The NCx5700x is a high-current single-channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high-power applications. The drivers feature complementary inputs, open-drain FAULT, Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. The NCx5700x accommodates 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. These onsemi devices provide >5kVRMS (UL1577 rating) galvanic isolation and >1200VIORM (working voltage) capabilities. The NCx5700x series is available in the wide-body SOIC-16 package with a guaranteed 8mm creepage distance between input and output to fulfill reinforced safety insulation requirements.

NCV57001 Isolated High Current IGBT Gate Drivers

onsemi NCV57001 Isolated High Current IGBT Gate Drivers with internal galvanic isolation are designed for high system efficiency and reliability in high-power applications. The NCV57001's features include complementary inputs, open drain FAULT, Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. The device allows both 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. The device provides >5kVrms (UL1577 rating) galvanic isolation and >1200Viorm (working voltage) capabilities. The NCV57001 Isolated High Current IGBT Gate Driver is packaged to fulfill reinforced safety insulation requirements. The device is offered in a wide-body SOIC-16 package with a guaranteed 8mm creepage distance between input and output.