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NVHL080N120SC1A

Name: onsemi NVHL080N120SC1A
Brand: onsemi
SKU: 863-NVHL080N120SC1A
Price: 99.19 SEK
Availability: InStock

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Mouser nr:

863-NVHL080N120SC1A

Tillverk: Nr.:

NVHL080N120SC1A

Tillverk:

onsemi

Beskrivning:

SiC-MOSFET:ar SIC MOS TO247-3L 80MOHM 1200V

Datablad:

NVHL080N120SC1A Datablad

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Mer information

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1 Kan skickas om 20 dagar

Ange kvantitet:

Minst: 1 Flera: 1

Enhetspris:

-,-- kr

Ext. pris:

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Est. Pris:

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	99,19 kr	99,19 kr
	59,51 kr	595,10 kr

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Produktattribut	Attributvärde	Välj attribut
Tillverkare:	onsemi
Produktkategori:	SiC-MOSFET:ar
RoHS-direktivet:
REACH - SVHC:
Monteringsstil:	Through Hole
Paket/låda:	TO-247-3
Transistorns polaritet:	N-Channel
Antal kanaler:	1 Channel
Vds - Dräneringskällans genombrottsspänning:	1.2 kV
Id - Kontinuerlig dräneringsström:	31 A
Rds på - Dräneringskällans resistans:	110 mOhms
Vgs - Gate-källans spänning:	- 15 V, + 25 V
Vgs th - Gate-källans tröskelspänning:	4.3 V
Qg - Gate-laddning:	56 nC
Minsta drifttemperatur:	- 55 C
Maximal drifttemperatur:	+ 175 C
Pd - Effektavledning:	178 W
Kanalläge:	Enhancement
Kvalificering:	AEC-Q101
Handelsnamn:	EliteSiC
Märke:	onsemi
Konfiguration:	Single
Falltid:	10 ns
Transkonduktans framåt - Min:	13 S
Förpackning:	Tube
Produkttyp:	SiC MOSFETS
Stigtid:	20 ns
Serie:	NVHL080N120SC1A
Fabriksförpackningskvantitet:	30
Underkategori:	Transistors
Teknologi:	SiC
Typisk fördröjningstid vid avstängning:	22 ns
Typisk fördröjningstid vid påslagning:	13 ns

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Datablad

NVHL080N120SC1A Datablad

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip sizes, ensuring low capacitance and gate charge. The EliteSiC N-Channel MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L/TO247-3LD packages. The NVHL080N120SC1 and NVHL080N120SC1A MOSFETs are qualified for automotive according to AEC-Q101 grade certification.