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Antal RoHS ECAD-modell Teknologi
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Paket/låda
Transistorns polaritet
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Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
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Maximal drifttemperatur
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Infineon Technologies MOSFET:er N-Ch 500V 21A D2PAK-2 CoolMOS C3
Datablad
1 432På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 21 A 190 mOhms - 20 V, 20 V 3.9 V 95 nC - 55 C + 150 C 208 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er N-Ch 650V 47A TO247-3 CoolMOS C3
Datablad
262På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 20 V, 20 V 2.1 V 255 nC - 55 C + 150 C 415 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_LEGACY
Datablad
2 836På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4.5 A 950 mOhms - 20 V, 20 V 3.9 V 19 nC - 55 C + 150 C 50 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET:er N-Ch 650V 34.6A TO247-3 CoolMOS C3
Datablad
240På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 34.6 A 81 mOhms - 20 V, 20 V 2.1 V 200 nC - 55 C + 150 C 313 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 34.6A TO247-3 CoolMOS C3
Datablad
188På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 34.6 A 100 mOhms - 20 V, 20 V 2.1 V 150 nC - 55 C + 150 C 313 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 15A TO220FP-3 CoolMOS C3
Datablad
569På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 15 A 280 mOhms - 20 V, 20 V 3.9 V 63 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_LEGACY
Datablad
2 025På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.2 A 1.4 Ohms - 20 V, 20 V 3.9 V 13 nC - 55 C + 150 C 38 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er N-Ch 650V 20.7A TO220-3
Datablad
420På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20.7 A 160 mOhms - 20 V, 20 V 3.9 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 560V 32A TO247-3 CoolMOS C3
Datablad
1 175På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 32 A 110 mOhms - 20 V, 20 V 2.1 V 170 nC - 55 C + 150 C 284 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 20.7A TO220FP-3 CoolMOS C3
Datablad
609På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 34.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 11A D2PAK-2 CoolMOS C3
Datablad
Produktkommenterarer
395På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 11 A 380 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 125 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 20.7A D2PAK-2 CoolMOS C3
Datablad
1 596På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er N-Ch 650V 20.7A TO247-3 CoolMOS C3
Datablad
1 157På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 47A TO247-3 CoolMOS C3
Datablad
620På lager
2 400Förväntad 2026-07-02
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 47 A 70 mOhms - 20 V, 20 V 2.1 V 252 nC - 55 C + 150 C 415 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_LEGACY
Datablad
2 538På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 7.6 A 600 mOhms - 20 V, 20 V 3.9 V 32 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 7.3A TO220-3
Datablad
220På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 3.9 V 21 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 11A TO220-3
Datablad
535På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 380 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 125 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 650V 20.7A TO220-3
Datablad
480På lager
1 000Förväntad 2026-07-02
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 560V 16A TO247-3 CoolMOS C3
Datablad
362På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 280 mOhms - 20 V, 20 V 3.9 V 66 nC - 55 C + 150 C 160 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 7.3A TO220FP-3 CoolMOS C3
Datablad
86På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 2.1 V 21 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 11A TO220FP-3 CoolMOS C3
Datablad
423På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 11 A 380 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_LEGACY
Datablad
915På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 3.9 V 21 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 24.3A TO220-3
Datablad
211På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24.3 A 160 mOhms - 20 V, 20 V 3.9 V 104.9 nC - 55 C + 150 C 240 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 650V 11A TO220FP-3 CoolMOS C3
Datablad
Ledtid 11 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 11 A 380 mOhms - 20 V, 20 V 3.9 V 45 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 560V 21A I2PAK-3
Datablad
Ledtid för icke lagerfört 8 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 500 V 21 A 190 mOhms - 20 V, 20 V 3 V 95 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube