FS50R12W2T7 & FS75R12W2T7 EasyPACK™ IGBT Modules

Infineon Technologies FS50R12W2T7 and FS75R12W2T7 EasyPACK™ IGBT Modules are 1200V three-phase input rectifier Insulated Gate Bipolar Transistor Modules. Based on TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diode technology, these devices provide strongly reduced losses and are highly controllable. These modules are specially optimized for industrial drive applications, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained with an operation overload temperature up to +175°C in the power module. 

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Antal RoHS ECAD-modell Produkt
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Kontinuerlig kollektorström vid 25 C
Gate-sändarens läckström
Minsta drifttemperatur
Maximal drifttemperatur
Förpackning
Infineon Technologies IGBT-moduler 1200 V, 50 A sixpack IGBT module
Datablad
Ledtid 10 Veckor
Min.: 1
Multipla: 1

IGBT Silicon Modules 6-Pack 1.2 kV 1.5 V 50 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT-moduler 1200 V, 75 A sixpack IGBT module
Datablad
Ledtid för icke lagerfört 10 Veckor
Min.: 1
Multipla: 1

IGBT Silicon Modules 6-Pack 1.2 kV 1.55 V 65 A 100 nA - 40 C + 175 C Tray