QPC1006

Qorvo
772-QPC1006
QPC1006

Tillverk:

Beskrivning:
RF-omkopplare, IC:er 50W, 0.15-2.8GHz GaN SP3T

ECAD-modell:
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Tillgänglighet

Lager:
Ej på lager
Fabrikens ledtid:
24 Veckor Uppskattad tillverkningstid i fabriken.
Minst: 100   Flera: 100
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Denna produkt levereras UTAN KOSTNAD

Prissättning (SEK)

Antal Enhetspris
Ext. pris
Komplett Papprulle (beställ i multiplar av 100)
934,35 kr 93.435,00 kr
200 Beräkning

Produktattribut Attributvärde Välj attribut
Qorvo
Produktkategori: RF-omkopplare, IC:er
RoHS-direktivet:  
SP3T
150 MHz
2.8 GHz
0.3 dB to 1 dB
30 dB
+ 275 C
SMD/SMT
QFN-24
GaN
QPC1006
Reel
Märke: Qorvo
Utvecklingskit: QPC1006EVB
Hög styrspänning: - 50 V
Fuktkänsliga: Yes
Antal omkopplare: Single
Arbetsström: 3 mA
Pd - Effektavledning: 14 W
Produkttyp: RF Switch ICs
Fabriksförpackningskvantitet: 100
Underkategori: Wireless & RF Integrated Circuits
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CNHTS:
8542399000
USHTS:
9030820000
ECCN:
5A991.g

QPC1006 Single-Pole, Triple–Throw (SP3T) Switch

Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) Switch is fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.15 to 2.8GHz, the QPC1006 typically supports 50W input power handling at control voltages of 0/−40V for CW and pulsed RF operations. This switch maintains a low insertion loss of less than 1.0dB and greater than 30dB isolation, making it ideal for high-power switching applications across defense and commercial platforms. The Qorvo QPC1006 is offered in a 4mm x 4mm plastic overmolded QFN package.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.