LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs

Texas Instruments LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs include an integrated driver and protection for switch-mode power converters. The LMG3522R030/LMG3522R030-Q1 integrates a silicon driver that allows switching speeds up to 150V/ns. The device implements TI’s integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, supplies clean switching and minimal ringing in hard-switching power supply topologies. An adjustable gate drive strength permits control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.

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Antal RoHS ECAD-modell Produkt
Typ
Monteringsstil
Paket/låda
Antal drivenheter
Antal utgångar
Utgångsström
Minimal matningsspänning
Maximal matningsspänning
Konfiguration
Stigtid
Falltid
Minsta drifttemperatur
Maximal drifttemperatur
Serie
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Texas Instruments Styrdrivenheter Automotive 650-V 30- m? GaN FET with int
Datablad
280På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 250

SMD/SMT VQFN-52 2.8 ns 22 ns - 40 C + 150 C LMG3522R030 Reel, Cut Tape, MouseReel
Texas Instruments Styrdrivenheter Automotive 650-V 30- m? GaN FET with int
Datablad
Ledtid för icke lagerfört 12 Veckor
Min.: 2 000
Multipla: 2 000
Papprulle: 2 000

Power Switch ICs High Side Switch SMD/SMT VQFN-52 1 Output 50 mA 7.5 V 18 V - 40 C + 125 C LMG3522R030 Reel
Texas Instruments Styrdrivenheter 650-V 30-m? GaN FET with integrated driv
Datablad
Ledtid för icke lagerfört 12 Veckor
Min.: 2 000
Multipla: 2 000
Papprulle: 2 000
Driver ICs - Various Half-Bridge SMD/SMT VQFN-52 1 Driver 1 Output 7.5 V 18 V Non-Inverting 4.3 ns 22 ns - 40 C + 125 C LMG3522R030 Reel