750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 51A N-CH SIC
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2 004På lager
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Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 105A N-CH SIC
Datablad
641På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 34A N-CH SIC
Datablad
594På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 31A N-CH SIC
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1 946På lager
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: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 56A N-CH SIC
Datablad
625På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TOLL 750V 120A SIC
Datablad
800På lager
Min.: 1
Multipla: 1
: 2 000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 120 A 4.8 V 170 nC + 175 V 405 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TOLL 750V 46A SIC
Datablad
1 791På lager
Min.: 1
Multipla: 1
: 2 000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 46 A 4.8 V 72 nC + 175 V 164 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 34A N-CH SIC
Datablad
321På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TOLL 750V 80A SIC
Datablad
441På lager
Min.: 1
Multipla: 1
: 2 000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 80 A 4.8 V 123 nC + 175 V 277 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
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439På lager
Min.: 1
Multipla: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datablad
410På lager
Min.: 1
Multipla: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
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900På lager
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: 1 000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar TOLL 750V 37A SIC
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1 750På lager
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: 2 000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 37 A 4.8 V 63 nC + 175 V 133 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datablad
450På lager
Min.: 1
Multipla: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TOLL 750V 26A SIC
Datablad
882På lager
Min.: 1
Multipla: 1
: 2 000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 26 A 4.8 V 48 nC + 175 V 100 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datablad
440På lager
Min.: 1
Multipla: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
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700På lager
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: 1 000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TOLL 750V 61A SIC
Datablad
83På lager
Min.: 1
Multipla: 1
: 2 000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 61 A 4.8 V 94 nC + 175 V 214 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 51A N-CH SIC
Datablad
1 439På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 98A N-CH SIC
Datablad
240På lager
1 000På beställningen
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Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 98 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 56A N-CH SIC
Datablad
142På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 31A N-CH SIC
Datablad
12På lager
1 000På beställningen
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Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 45 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 105A N-CH SIC
Datablad
450Förväntad 2026-11-11
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement