NDSH50120C Silicon Carbide (SiC) Diodes

onsemi NDSH50120C Silicon Carbide (SiC) Diodes provide superior switching performance and higher reliability than silicon. The onsemi NDSH50120C features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Resultat: 2
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Konfiguration If - Framström Vrrm - Repetativ backspänning Vf - Framspänning Ifsm - Stötström framåt Ir - Motström Minsta drifttemperatur Maximal drifttemperatur Serie Förpackning

onsemi SiC-schottkydioder Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50 A, 1200 V, D3, TO-247-2L 463På lager
Min.: 1
Multipla: 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.4 V 231 A 200 uA - 55 C + 175 C NDSH50120C Tube
onsemi SiC-schottkydioder SIC DIODE GEN2.0 1200V TO247-2L 441På lager
Min.: 1
Multipla: 1

Through Hole TO-247-2 Single 53 A 1.2 kV 1.4 V 1.568 kA 12.2 uA - 55 C + 175 C NDSH50120C-F155 Tube