2000V CoolSiC™ MOSFETs

Infineon Technologies 2000V CoolSiC™ MOSFETs are trench MOSFETs in a TO-247PLUS-4-HCC package. These MOSFETs are designed to deliver increased power density without sacrificing the system's reliability, even under demanding high-voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability using the .XT interconnection technology and enable top efficiencies in various applications. The 2000V MOSFETs feature a benchmark gate threshold voltage of 4.5V and offer very-low switching losses. Typical applications include energy storage systems, EV charging, string inverter, and solar power optimizer.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Infineon Technologies SiC-MOSFET:ar CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
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920På lager
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Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 123 A 16.5 mOhms - 10 V, + 23 V 3.5 V 246 nC - 55 C + 150 C 552 W Enhancement CoolSIC
Infineon Technologies SiC-MOSFET:ar CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datablad
749På lager
960Förväntad 2026-11-05
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 89 A 33 mOhms - 10 V, + 23 V 3.5 V 137 nC - 55 C + 150 C 576 W Enhancement CoolSIC
Infineon Technologies SiC-MOSFET:ar CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datablad
283På lager
480På beställningen
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 34 A 98 mOhms - 10 V, + 23 V 3.5 V 64 nC - 55 C + 150 C 267 W Enhancement CoolSIC
Infineon Technologies SiC-MOSFET:ar CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datablad
95På lager
1 440På beställningen
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 48 A 64 mOhms - 10 V, + 23 V 3.5 V 82 nC - 55 C + 150 C 348 W Enhancement CoolSIC
Infineon Technologies SiC-MOSFET:ar CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datablad
4 353Förväntad 2027-02-18
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 26 A 131 mOhms - 10 V, + 23 V 3.5 V 55 nC - 55 C + 150 C 217 W Enhancement CoolSIC