E Series High Voltage MOSFETs

Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.  

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Förpackning
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4.3 A 1.1 Ohms - 30 V, 30 V 2 V 32 nC - 55 C + 150 C 69 W Enhancement Reel, Cut Tape
Vishay / Siliconix MOSFET:er TO220 800V 7.5A N-CH MOSFET
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7.5 A 205 mOhms - 30 V, 30 V 4 V 48 nC - 55 C + 155 C 33 W Enhancement Tube
Vishay / Siliconix MOSFET:er N-CHANNEL 800V E Series Pwr MOSFET
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1 182På lager
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Si SMD/SMT TO-263-4 N-Channel 1 Channel 800 V 21 A 184 mOhms - 30 V, 30 V 4 V 59 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO263 800V 15A N-CH MOSFET
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9 479På lager
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 15 A 250 mOhms - 30 V, 30 V 4 V 41 nC - 55 C + 155 C 179 W Enhancement Tube
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2 800På lager
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Si SMD/SMT D²PAK-2 N-Channel 1 Channel 650 V 24 A 156 mOhms - 30 V, 30 V 4 V 81 nC - 55 C + 150 C 250 W Enhancement Reel, Cut Tape, MouseReel
Vishay MOSFET:er TO220 600V 12A N-CH MOSFET
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 380 mOhms - 30 V, 30 V 4 V 29 nC - 55 C + 150 C 147 W Enhancement Tube
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 15 A 250 mOhms - 30 V, 30 V 4 V 41 nC - 55 C + 155 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO251 800V 2.9A N-CH MOSFET
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Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 2.9 A 2.5 Ohms - 30 V, 30 V 4 V 7 nC - 55 C + 155 C 62.5 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 600V 8A N-CH MOSFET
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20 A 180 mOhms - 30 V, 30 V 4 V 48 nC - 55 C + 150 C 33 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET:er TO220 500V 19A N-CH MOSFET
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2 002På lager
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Si Through Hole N-Channel 1 Channel 500 V 19 A 184 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 34 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 600V 25A N-CH MOSFET
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1 611På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 127 mOhms - 30 V, 30 V 3 V 75 nC - 55 C + 150 C 250 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 600V 7A N-CH MOSFET
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5 512På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 609 V 7 A 600 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 78 W Enhancement Bulk
Vishay / Siliconix MOSFET:er TO220 800V 7A N-CH MOSFET
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1 467På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 250 mOhms - 30 V, 30 V 4 V 41 nC - 55 C + 155 C 34 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 600V 13A N-CH MOSFET
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 269 mOhms - 30 V, 30 V 4 V 64 nC - 55 C + 150 C 147 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 500V 14.5A N-CH MOSFET
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Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 14.5 A 243 mOhms - 30 V, 30 V 4 V 66 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 800V 15A N-CH MOSFET
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3 906På lager
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Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 15 A 250 mOhms - 30 V, 30 V 4 V 122 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO247 800V 15A N-CH MOSFET
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1 561På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 15 A 250 mOhms - 30 V, 30 V 4 V 41 nC - 55 C + 155 C 179 W Enhancement Tube
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 13 A 304 mOhms - 30 V, 30 V 4 V 35 nC - 55 C + 155 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 600V 20A N-CH MOSFET
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 156 mOhms - 30 V, 30 V 4 V 96 nC - 55 C + 150 C 179 W Enhancement Tube

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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 12 A 380 mOhms - 30 V, 30 V 4 V 88 nC - 55 C + 150 C 179 W Enhancement Tube
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Si Through Hole TO-247AC-3 N-Channel 1 Channel 800 V 21 A 184 mOhms - 30 V, 30 V 4 V 59 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 500V 10.5A N-CH MOSFET
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Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 10.5 A 380 mOhms - 30 V, 30 V 4 V 50 nC - 55 C + 150 C 114 W Enhancement Tube
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 5.4 A 820 mOhms - 30 V, 30 V 4 V 44 nC - 55 C + 150 C 78 W Enhancement Tube
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9 A 184 mOhms - 30 V, 30 V 4 V 59 nC - 55 C + 150 C 35 W Enhancement Tube