DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency, and a compact design, such as high-efficiency switching power supplies for servers and telecom base stations and as power conditioners for photovoltaic inverters. Toshiba DTMOSIV-H MOSFETs achieve a high-speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV and without loss of power. This is accomplished by reducing parasitic capacitance between gate and drain, which also contributes to improved power efficiency and downsizing of products.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Toshiba MOSFET:er DTMOSIV-High Speed 600V 88mVGS=10V)
Datablad
4 913På lager
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 240 W Enhancement DTMOSIV-H Reel, Cut Tape

Toshiba MOSFET:er DTMOSIV-H/S 600V 65mOhmmax(VGS=10V)
Datablad
30På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.5 V 85 nC - 55 C + 150 C 270 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6
Datablad
45På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 24 mOhms 30 V 4 V 140 nC + 150 C 506 W Enhancement Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
665På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
94På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
84På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
39På lager
60Förväntad 2026-02-20
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er DTMOSIV-High Speed 600V 88m (VGS=10V)
Datablad
72På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET:er DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
Datablad
34På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er TO-247-4L PD=230W 1MHz PWR MOSFET TRNS
Datablad
46På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 30.8 A 88 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
98Förväntad 2026-05-15
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
60Förväntad 2026-02-20
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er DTMOSIV-High Speed 600V 40mOhmmax
Datablad
60Förväntad 2026-02-20
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er TO-247-4L PD=400W 1MHz PWR MOSFET TRNS
Datablad
5Förväntad 2026-02-20
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 61.8 A 40 mOhms - 30 V, 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er TO-220SIS PD=45W 1MHz PWR MOSFET TRNS
Datablad
Ledtid för icke lagerfört 32 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er TO-220SIS PD=45W 1MHz PWR MOSFET TRNS
Datablad
Ledtid för icke lagerfört 32 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 150 mOhms - 30 V, 30 V 3.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET:er Pb-F POWER MOSFET TRANSISTOR DFN 8?8 PD=180W F=1MHZ
Datablad
Ledtid för icke lagerfört 20 Veckor
Min.: 2 500
Multipla: 2 500
Papprulle: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 22 A 170 mOhms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFET:er Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=180W F=1MHZ
Datablad
Ledtid för icke lagerfört 20 Veckor
Min.: 2 500
Multipla: 2 500
Papprulle: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 25 A 150 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFET:er 180W 1MHZ POWER MOSFET TRANSISTOR
Datablad
Ledtid för icke lagerfört 20 Veckor
Min.: 2 500
Multipla: 2 500
Papprulle: 2 500

Si SMD/SMT DFN8x8-5 DTMOSIV-H Reel