QPD0005 GaN RF Transistors

Qorvo QPD0005 GaN RF Transistors are single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a plastic overmold DFN package. These RF transistors operate over a 2.5GHz to 5GHz frequency range. Qorvo QPD0005 GaN RF Transistors are single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation. These transistors come in a 4.5mm x 4.0mm package and are RoHS compliant. Applications include WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general-purpose applications.

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Antal RoHS ECAD-modell Vds - Dräneringskällans genombrottsspänning
Qorvo GaN FET 3.3-3.8GHz 5W 50V GaN Transistor Ledtid 9 Veckor
Min.: 1
Multipla: 1
Papprulle: 100

48 V
Qorvo GaN FET 3.3-3.8GHz 5W 50V GaN Transistor Ledtid för icke lagerfört 16 Veckor
Min.: 2 500
Multipla: 2 500
Papprulle: 2 500

48 V