RGTV 650V Field Stop Trench IGBTs

ROHM Semiconductor RGTV 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGTV IGBTs feature high-speed switching, low switching loss, and a short circuit withstand time 2μs. The ROHM RGTV 650V Field Stop Trench IGBTs are ideal for Solar Inverter, UPS, Welding, IH, and PFC applications.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Förpackning
ROHM Semiconductor IGBTs 650V 30A TO-3PFM Field Stp Trnch IGBT
Datablad
449På lager
Min.: 1
Multipla: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 76 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 30A TO-3PFM Field Stp Trnch IGBT
Datablad
846På lager
Min.: 1
Multipla: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 76 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 60A Field Stop Trench IGBT
Datablad
439På lager
Min.: 1
Multipla: 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 111 A 319 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 50A TO-3PFM Field Stp Trnch IGBT
Datablad
451På lager
Min.: 1
Multipla: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 45 A 94 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 50A TO-3PFM Field Stp Trnch IGBT
Datablad
399På lager
Min.: 1
Multipla: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 45 A 94 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 2s Short-Circuit Tolerance, 650V 23A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
Datablad
450På lager
Min.: 1
Multipla: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 85 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 2s Short-Circuit Tolerance, 650V 23A, TO-3PFM, Field Stop Trench IGBT
Datablad
450På lager
Min.: 1
Multipla: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 85 W - 40 C + 175 C Tube