1200V E4MS Discrete SiC MOSFETs

Wolfspeed 1200V E4MS Discrete Silicon Carbide (SiC) MOSFETs deliver unparalleled performance in onboard automotive applications. The E4MS family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for engineers to tune and optimize the performance in the application. The E4MS family provides improved Eon, ERR, and Eoff losses compared to the E3M family of devices, while maintaining a low RDS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of onboard topologies.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 47mohm, 1200V, TO-247-4, Automotive, Gen4
Datablad
450Förväntad 2026-09-21
Min.: 1
Multipla: 1

SMD/SMT TO-247-4 N-Channel 1 Channel 1.2 kV 46 A 61 mOhms - 10 V, 23 V 3.9 V 68 nC - 55 C + 175 C 186 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET,25mohm,1200V, TO-263-7 XL T&R , Automotive, Gen4
Datablad
Ej på lager
Min.: 800
Multipla: 800
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 82 A 33 mOhms - 10 V, + 23 V 2.6 V 125 nC - 55 C + 175 C 330 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 25mohm, 1200V, TO-247-4, Automotive, Gen4
Datablad
Ej på lager
Min.: 1
Multipla: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 77 A 33 mOhms - 10 V, + 23 V 2.6 V 125 nC - 55 C + 175 C 281 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET,25mohm,1200V, TSC (U2) , Automotive, Gen4
Datablad
Ledtid för icke lagerfört 22 Veckor
Min.: 800
Multipla: 800
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 82 A 33 mOhms - 10 V, + 23 V 2.6 V 125 nC - 55 C + 175 C 350 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET,36mohm,1200V, TO-263-7 XL T&R , Automotive, Gen4
Datablad
Ej på lager
Min.: 800
Multipla: 800
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 60 A 47 mOhms - 10 V, + 23 V 2.6 V 88 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 36mohm, 1200V, TO-247-4, Automotive, Gen4
Datablad
Ledtid för icke lagerfört 22 Veckor
Min.: 1
Multipla: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 47 mOhms - 10 V, + 23 V 2.6 V 88 nC - 55 C + 175 C 211 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET,36mohm,1200V, TSC (U2) , Automotive, Gen4
Datablad
Ej på lager
Min.: 800
Multipla: 800
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 60 A 47 mOhms - 10 V, + 23 V 2.6 V 88 nC - 55 C + 175 C 274 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 47mohm, 1200V, TO-263-7 XL T&R, Automotive, Gen4
Datablad
Ej på lager
Min.: 800
Multipla: 800
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 46 A 61 mOhms - 10 V, 23 V 3.9 V 68 nC - 55 C + 175 C 203 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 47mohm, 1200V, TSC (U2), Automotive, Gen4
Datablad
Ej på lager
Min.: 800
Multipla: 800
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 48 A 61 mOhms - 10 V, 23 V 3.9 V 68 nC - 55 C + 175 C 217 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 65mohm, 1200V, TO-263-7 XL T&R, Automotive, Gen4
Datablad
Ledtid för icke lagerfört 22 Veckor
Min.: 800
Multipla: 800
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 85 mOhms - 10 V, 23 V 3.9 V 51 nC - 55 C + 175 C 163 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 65mohm, 1200V, TO-247-4, Automotive, Gen4
Datablad
Ej på lager
Min.: 450
Multipla: 450

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 A 85 mOhms - 10 V, 23 V 3.9 V 51 nC - 55 C + 175 C 140 W Enhancement AEC-Q101
Wolfspeed SiC-MOSFET:ar SiC, MOSFET, 65mohm, 1200V, TSC (U2), Automotive, Gen4
Datablad
Ej på lager
Min.: 800
Multipla: 800
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 85 mOhms - 10 V, 23 V 3.9 V 51 nC - 55 C + 175 C 166 W Enhancement AEC-Q101