AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Serie
Förpackning
onsemi IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 4L
Datablad
444På lager
Min.: 1
Multipla: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.37 V 20 V 50 A 416 W - 55 C + 175 C AFGH4L25T120RW Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT TO247 4L
Datablad
445På lager
Min.: 1
Multipla: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.37 V 20 V 50 A 416 W - 55 C + 175 C AFGH4L25T120RWD Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 3L
Datablad
418På lager
Min.: 1
Multipla: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.38 V 20 V 50 A 468 W - 55 C + 175 C AFGHL25T120RW Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT TO247 3L
Datablad
278På lager
Min.: 1
Multipla: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.38 V 20 V 50 A 468 W - 55 C + 175 C AFGHL25T120RWD Tube