CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
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Förpackning
Infineon Technologies MOSFET:er LOW POWER_NEW
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3 000På lager
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Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms - 30 V, 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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516På lager
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Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 9 A 750 mOhms - 20 V, 20 V 2.5 V 23 nC - 55 C + 150 C 73 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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217På lager
240Förväntad 2026-02-16
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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130På lager
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Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 76 A 30 mOhms - 20 V, 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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174På lager
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Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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1 494På lager
MouseReel tillgängligt
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Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 30 V, 30 V 3 V 20 nC - 55 C + 150 C 7.4 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er LOW POWER_NEW
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328På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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538På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er CONSUMER
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197På lager
4 500På beställningen
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Si Through Hole TO-251-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms - 16 V, 16 V 2.5 V 10.5 nC - 40 C + 150 C 43.1 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er LOW POWER_NEW
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231På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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42 720På beställningen
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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14 987På beställningen
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Multipla: 1
Papprulle: 5 000

Si SMD/SMT TDFN-8 N-Channel 1 Channel 800 V Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er HIGH POWER_NEW
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2 947På beställningen
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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5 500På beställningen
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
906Förväntad 2026-07-23
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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1 601Förväntad 2026-05-14
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
Datablad
1 000Förväntad 2026-03-02
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
Datablad
915Förväntad 2026-05-22
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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350Förväntad 2026-06-11
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 50 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
227Förväntad 2026-07-03
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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Ledtid för icke lagerfört 8 Veckor
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Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 3 A 1.7 Ohms - 20 V, 20 V 2.5 V 9 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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Ledtid för icke lagerfört 12 Veckor
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Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms - 20 V, 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er LOW POWER_NEW
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Ledtid för icke lagerfört 8 Veckor
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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Ledtid för icke lagerfört 13 Veckor
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 30 V, 30 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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Ledtid för icke lagerfört 18 Veckor
Min.: 5 000
Multipla: 5 000
Papprulle: 5 000

Si SMD/SMT TDFN-8 N-Channel 1 Channel 700 V Enhancement CoolMOS Reel