High-Density SiC Power Modules

ROHM Semiconductor High-Density Silicon Carbide (SiC) Power Modules are designed to support high-efficiency power conversion in automotive and industrial applications. The lineup includes several package platforms such as TRCDRIVE pack™, HSDIP20, and DOT-247, each optimized for different power classes and system requirements. These packages integrate SiC MOSFETs into compact module structures that enable high power density, stable switching performance, and efficient thermal management. Depending on the package, configurations such as 2-in-1, 4-in-1, and 6-in-1 are available, providing flexibility for a wide range of power conversion and motor drive applications.

Resultat: 6
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Förpackning
ROHM Semiconductor MOSFET-moduler 1200V, 70A, Full-bridge, Automotive / Industrial Grade SiC Power Module 60På lager
Min.: 1
Multipla: 1
SiC 4 Channel 1.2 kV 70 A 25 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 385 W Bulk
ROHM Semiconductor MOSFET-moduler 1200V, 106A, Half-bridge, SiC Power Module 225På lager
Min.: 1
Multipla: 1
SiC DOT-247-7 N-Channel 2 Channel 1.2 kV 106 A 15 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 361 W Tube
ROHM Semiconductor MOSFET-moduler 750V, 90A, Full-bridge, Automotive / Industrial Grade SiC Power Module 60På lager
Min.: 1
Multipla: 1
SiC HSDIP-20 N-Channel 4 Channel 750 V 90 A 19 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 385 W Bulk
ROHM Semiconductor MOSFET-moduler 750V, 90A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module 60På lager
Min.: 1
Multipla: 1
SiC HSDIP-20 N-Channel 6 Channel 750 V 90 A 19 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 385 W Bulk
ROHM Semiconductor MOSFET-moduler half-bridge module consisting of SiC-MOSFETs, suitable for Automotive application, Inverter, Converter, and (Hybrid) electrical vehicles EV/HEV.
80Förväntad 2026-05-07
Min.: 1
Multipla: 1
SiC Press Fit N-Channel 2 Channel 1.2 kV 394 A 8.6 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 1.667 kW Bulk
ROHM Semiconductor MOSFET-moduler 750V, 47A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module
60Förväntad 2026-09-08
Min.: 1
Multipla: 1
SiC HSDIP-20 N-Channel 6 Channel 750 V 47 A 37 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 227 W Bulk