NVBG030N120M3S Silicon Carbide (SiC) MOSFET
onsemi NVBG030N120M3S Silicon Carbide (SiC) MOSFET is a 1200V M3S planar EliteSiC MOSFET optimized for fast switching applications. This MOSFET features a 107nC ultra-low gate charge, 106pF high-speed switching with low capacitance, and 29mΩ typical drain-to-source ON resistance at VGS=18V. The NVBG030N120M3S SiC MOSFET offers optimum performance when driven with an 18V gate drive; however, it also works well with a 15V gate drive. This MOSFET is 100% Avalanche tested, AEC-Q101 qualified, and PPAP capable. The NVBG030N120M3S MOSFET comes in a D2PAK-7L package for low common source inductance and is lead-free 2LI (on second-level interconnection) and RoHS compliant (with exemption 7a). Typical applications include automotive on-board chargers and DC/DC converters for EV/HEV.
