Resultat: 23
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering Handelsnamn Förpackning
Infineon Technologies MOSFET:er N-Ch 600V 31A D2PAK-2 CoolMOS CPA 3 852På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 11.4A D2PAK-2 2 513På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11.4 A 280 mOhms - 20 V, 20 V 3.5 V 41 nC - 40 C + 150 C 104.2 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 600V 31A D2PAK-2 CoolMOS CPA 506På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er N-Ch 650V 31.2A TO247-3 604På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 63.3A TO247-3 205På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms - 20 V, 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 63.3A TO247-3 211På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms - 20 V, 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 650V 6A D2PAK-2 918På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 6 A 594 mOhms - 20 V, 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 99.6A D2PAK-2 584På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 57.2A D2PAK-2 1 025På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 17.5 A 171 mOhms - 20 V, 20 V 3.5 V 68 nC - 40 C + 150 C 151 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er N-Ch 600V 60A TO247-3 CoolMOS CPA 421På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 45 mOhms - 20 V, 20 V 3 V 190 nC - 40 C + 150 C 431 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 43.3A TO247-3 391På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms - 20 V, 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 650V 57.2A D2PAK-2 68På lager
1 000Förväntad 2026-02-16
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 17.5 A 171 mOhms - 20 V, 20 V 3.5 V 68 nC - 40 C + 150 C 151 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 11.4A D2PAK-2 30På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11.4 A 280 mOhms - 20 V, 20 V 3.5 V 41 nC - 40 C + 150 C 104.2 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er AUTOMOTIVE_COOLMOS 87På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q101 CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 22.4A TO247-3 317På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22.4 A 150 mOhms - 20 V, 20 V 3.5 V 86 nC - 40 C + 150 C 195.3 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET:er AUTOMOTIVE_COOLMOS 260På lager
240Förväntad 2026-02-16
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 650V 6A DPAK-2 1 679På lager
2 500Förväntad 2026-04-09
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6 A 594 mOhms - 20 V, 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 31.2A TO220-3 435På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 31.2 A 110 mOhms - 20 V, 20 V 3 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 43.3A TO247-3 211På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms - 20 V, 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 31.2A TO247-3 201På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 650V 99.6A D2PAK-2 Ledtid för icke lagerfört 8 Veckor
Min.: 1 000
Multipla: 1 000
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Reel
Infineon Technologies MOSFET:er N-Ch 650V 6A DPAK-2 Ledtid för icke lagerfört 18 Veckor
Min.: 2 500
Multipla: 2 500
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6 A 594 mOhms - 20 V, 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel
Infineon Technologies MOSFET:er N-Ch 650V 8.7A DPAK-2 Ledtid för icke lagerfört 18 Veckor
Min.: 2 500
Multipla: 2 500
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 8.7 A 420 mOhms - 20 V, 20 V 4 V 32 nC - 55 C + 175 C 83.3 W Enhancement AEC-Q100 CoolMOS Reel