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NCD57001FDWR2G

Name: onsemi NCD57001FDWR2G
Brand: onsemi
SKU: 863-NCD57001FDWR2G
Price: 52.65 SEK
Availability: InStock

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Mouser nr:

863-NCD57001FDWR2G

Tillverk: Nr.:

NCD57001FDWR2G

Tillverk:

onsemi

Beskrivning:

Galvaniserade isolerade gatedrivkretsar ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

Datablad:

NCD57001FDWR2G Datablad

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Mer information

Lär dig mer om onsemi NCD57001FDWR2G

På lager: 1 738

Lager:: 1 738 Kan skickas omedelbart

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Fabrikens ledtid:: 21 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.

Ange kvantitet:

Minst: 1 Flera: 1

Enhetspris:

-,-- kr

Ext. pris:

-,-- kr

Est. Pris:

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	52,65 kr	52,65 kr
	35,53 kr	355,30 kr
	32,81 kr	820,25 kr
	26,49 kr	2.649,00 kr
	25,51 kr	6.377,50 kr
	23,76 kr	11.880,00 kr
Komplett Papprulle (beställ i multiplar av 1000)
	22,24 kr	22.240,00 kr

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Produktattribut	Attributvärde	Välj attribut
Tillverkare:	onsemi
Produktkategori:	Galvaniserade isolerade gatedrivkretsar
RoHS-direktivet:
Serie:	NCD57001FDWR2G
Monteringsstil:	SMD/SMT
Minsta drifttemperatur:	- 40 C
Maximal drifttemperatur:	+ 125 C
Stigtid:	10 ns
Falltid:	15 ns
Förpackning:	Reel
Förpackning:	Cut Tape
Märke:	onsemi
Konfiguration:	Inverting, Non-Inverting
Antal drivenheter:	1 Driver
Antal utgångar:	1 Output
Utgångsström:	6 A
Produkt:	IGBT, MOSFET Gate Drivers
Produkttyp:	Galvanically Isolated Gate Drivers
Fabriksförpackningskvantitet:	1000
Underkategori:	PMIC - Power Management ICs
Maximal matningsspänning:	5 V
Minimal matningsspänning:	3.3 V

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Datablad

NCD57001FDWR2G Datablad

Material Composition Disclosure

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCD57001FDWR2G Isolated IGBT Gate Drivers

onsemi NCD57001FDWR2G Isolated High-Current IGBT Gate Drivers are single-channel IGBT drivers with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate undervoltage lockouts (UVLOs), DESAT protection, and soft turn-off at DESAT. onsemi NCD57001FDWR2G gate drivers accommodate 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. This gate driver provides >5kV_rms (UL1577 rating) galvanic isolation and >1200V_iorm (working voltage) capabilities. Typical applications include solar inverters, motor control, uninterruptible power supplies (UPS), industrial power supplies, and welding.

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The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.