650V CoolMOS™ CFD7 SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7 SJ Power MOSFETs are ultra-fast diodes that extend the voltage class offering of the CFD7 family. The power MOSFETs have an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior. These CFD7 power MOSFETs offer the highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). The MOSFETs blend all the advantages of a fast-switching technology with superior hard computation robustness. These power MOSFETs support CoolMOS™ CFD7 technology that meets reliability standards and supports high power density solutions.

Resultat: 17
Välj Bild Artikelnummer
 Tillverk:
Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet.
Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Infineon Technologies MOSFET:er 650V CoolMOS CFD7 SJ Power Device
Datablad
525På lager
Min.: 1
Multipla: 1
Papprulle: 750

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er 650V CoolMOS CFD7 SJ Power Device
Datablad
525På lager
Min.: 1
Multipla: 1
Papprulle: 750

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
384På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 22 A 110 mOhms - 20 V, 20 V 4.5 V 41 nC - 55 C + 150 C 114 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
272På lager
Min.: 1
Multipla: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
439På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-2 (TO-263-2) N-Channel 1 Channel 700 V 50 A 41 mOhms - 20 V, 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
1 037På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-2 (TO-263-2) N-Channel 1 Channel 650 V 25 A 90 mOhms - 20 V, 20 V 4.5 V 53 nC - 55 C + 150 C 127 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
240På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
140På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 700 V 106 A 18 mOhms - 20 V, 20 V 4.5 V 234 nC - 55 C + 150 C 446 W Enhancement Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
314På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms - 20 V, 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
734På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 190 mOhms - 20 V, 20 V 4.5 V 23 nC - 40 C + 150 C 63 W Enhancement Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
633På lager
1 000Förväntad 2026-02-16
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT N-Channel 1 Channel 700 V 15 A 155 mOhms - 20 V, 20 V 4.5 V 28 nC - 55 C + 150 C 77 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
318På lager
Min.: 1
Multipla: 1

Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms - 20 V, 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
151På lager
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
136På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
94På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 19 A 125 mOhms - 20 V, 20 V 4.5 V 36 nC - 55 C + 150 C 98 W Enhancement Tube
Infineon Technologies MOSFET:er AUTOMOTIVE_COOLMOS
Datablad
240På beställningen
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 63 A 35 mOhms - 20 V, 20 V 4.5 V 145 nC - 40 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
Ledtid för icke lagerfört 17 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 25 A 90 mOhms - 20 V, 20 V 4.5 V 53 nC - 55 C + 150 C 127 W Enhancement Tube