NV6428 Bi-Directional GaNFast™ Power Switches

Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches are designed to block voltage in both directions. A monolithic, integrated substrate-clamping circuit between each source and the common substrate automatically clamps the source-to-substrate voltage. Navitas’ unique substrate clamp technology delivers optimized switching performance during 4-quadrant operation compared to a floating-substrate switch, which can experience a "back-gating effect".

Resultat: 2
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Id - Kontinuerlig dräneringsström Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur
Navitas Semiconductor GaN FET GaNFast BDS 650V 52mOhm TOLT 234På lager
Min.: 1
Multipla: 1
: 450

SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C
Navitas Semiconductor GaN FET GaNFast BDS 650V 52mOhm TOLT Ledtid för icke lagerfört 26 Veckor
Min.: 1
Multipla: 1
: 1 500

SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C