LSIC1MO120G0040

IXYS
576-LSIC1MO120G0040
LSIC1MO120G0040

Tillverk:

Beskrivning:
SiC-MOSFET:ar SiC MOSFET 1200V 40mO TO247-4L

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 423

Lager:
423 Kan skickas omedelbart
Fabrikens ledtid:
29 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Partier som är större än 423 kommer att omfattas av ett krav på minimibeställning.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
268,60 kr 268,60 kr
221,96 kr 2 219,60 kr
203,94 kr 20 394,00 kr

Produktattribut Attributvärde Välj attribut
IXYS
Produktkategori: SiC-MOSFET:ar
RoHS-direktivet:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
70 A
50 mOhms
- 5 V, + 20 V
4 V
175 nC
- 55 C
+ 175 C
357 W
Enhancement
Märke: IXYS
Konfiguration: Single
Falltid: 8 ns
Förpackning: Tube
Produkttyp: SiC MOSFETS
Stigtid: 9 ns
Serie: LSIC1MO120G0xxx
Fabriksförpackningskvantitet: 450
Underkategori: Transistors
Teknologi: SiC
Typisk fördröjningstid vid avstängning: 22 ns
Typisk fördröjningstid vid påslagning: 13 ns
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Attribut som valts: 0

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Efterlevnadskoder
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Ursprungsklassificeringar
Ursprungsland:
Filippinerna
Monteringsland:
Ej tillgänglig
Distributionsland:
Ej tillgänglig
Landet kan komma att ändras vid leveranstillfället.

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LSIC1MO120G0x N-Channel SiC MOSFETs

IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.