GEN3 1 200 V SiC MOSFET-effektmoduler

SemiQ GEN3 1200V SiC MOSFET Power Modules with an isolated backplate are based on third-generation SiC technology and tested at over 1400V. These come in two versions, the GCMX series and the GCMS series. Both of these highly rugged and easy-mount devices provide smaller die sizes, faster switching speeds, and reduced losses. The lineup includes an overall drain-source on-resistance [RDS(on)] range from 8.4mΩ to 80mΩ with a switching time as low as 67ns. The COPACK MOSFETs (GCMS) with a Schottky barrier diode offer exceptional switching losses at a high junction temperature due to the low turn-on switching losses. The SemiQ GEN3 1200V SiC MOSFET Power Modules feature a continuous operational and storage temperature of -55°C to +175°C. Target applications include solar inverters, energy storage systems (ESS), battery charging, and server power supplies.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Serie
Förpackning
SemiQ MOSFET-moduler Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
Datablad
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Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 189 A 12 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 536 W GCMS Tube
SemiQ MOSFET-moduler Gen3 1200V 16mohm SiC MOSFET & SBD Module, SOT-227
Datablad
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Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 103 A 23 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 303 W GCMS Tube
SemiQ MOSFET-moduler Gen3 1200V 40mohm SiC MOSFET & SBD Module, SOT-227
Datablad
Ej på lager
Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 53 A 52 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 183 W GCMS Tube
SemiQ MOSFET-moduler Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
Datablad
Ej på lager
Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 28 A 100 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 118 W GCMS Tube
SemiQ MOSFET-moduler Gen3 1200V 8mohm SiC MOSFET Module, SOT-227
Datablad
Ledtid för icke lagerfört 24 Veckor
Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 188 A 12 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 536 W GCMX Tube
SemiQ MOSFET-moduler Gen3 1200V 16mohm SiC MOSFET Module, SOT-227
Datablad
Ej på lager
Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 103 A 23 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 303 W GCMX Tube
SemiQ MOSFET-moduler Gen3 1200V 40mohm SiC MOSFET Module, SOT-227
Datablad
Ej på lager
Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 53 A 52 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 183 W GCMX Tube
SemiQ MOSFET-moduler Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
Datablad
Ej på lager
Min.: 1
Multipla: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 28 A 100 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 118 W GCMX Tube