π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high-efficiency and low noise in a compact TO-220SIS package. π-MOS IX MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX components provide 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same efficiency level. These N-channel power MOSFETs offer high design flexibility, reducing workloads. In addition, the π-MOS IX series provides the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Toshiba MOSFET:er TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
Datablad
340På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 3.5 A 2.2 Ohms - 30 V, 30 V 4 V 13 nC - 55 C + 150 C 30 W Enhancement MOSIX Tube
Toshiba MOSFET:er TO-220SIS PD=40W 1MHz PWR MOSFET TRNS
Datablad
39På lager
300Förväntad 2026-06-08
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.5 A 1 Ohms - 30 V, 30 V 4 V 24 nC - 55 C + 150 C 40 W Enhancement MOSIX Tube
Toshiba MOSFET:er N-Ch TT-MOSIX 600V 35W 740pF 6A
Datablad
228På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 6 A 1.2 Ohms - 30 V, 30 V 2 V 21 nC + 150 C 35 W Enhancement MOSIX Tube
Toshiba MOSFET:er TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
Datablad
243På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 2 A 4.1 Ohms - 30 V, 30 V 4 V 8 nC - 55 C + 150 C 30 W Enhancement MOSIX Tube
Toshiba MOSFET:er N-Ch TT-MOSIX 600V 45W 1320pF 11A
Datablad
277På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 11 A 650 mOhms - 30 V, 30 V 2 V 34 nC + 150 C 45 W Enhancement MOSIX Tube
Toshiba MOSFET:er N-Ch TT-MOSIX 600V 40W 1130pF 10A
Datablad
941Förväntad 2026-06-12
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 750 mOhms - 30 V, 30 V 2 V 30 nC - 55 C + 150 C 40 W Enhancement MOSIX Tube
Toshiba MOSFET:er TO-220SIS PD=35W 1MHz PWR MOSFET TRNS
Datablad
347Förväntad 2026-07-17
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 4 A 1.7 Ohms - 30 V, 30 V 4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSIX Tube
Toshiba MOSFET:er N-Ch TT-MOSIX 600V 30W 490pF 3.7A
Datablad
Ledtid 17 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 3.7 A 1.9 Ohms - 30 V, 30 V 2 V 14 nC - 55 C + 150 C 30 W Enhancement MOSIX Tube