1200V Common Emitter IGBT Modules

Infineon Technologies 1200V Common Emitter IGBT Modules are part of the TRENCHSTOP™ IGBT7 portfolio that combines a 600A or 800A common emitter with low saturation and a fast trench IGBT module with an emitter-controlled diode. The 1200V Common Emitter IGBT Modules provide higher current capability in existing packages, allowing an increase in inverter output power with the same frame size. The Infineon 1200V Common Emitter IGBT Modules supply high power density, reliability, and flexibility, prepared for three-level configuration.

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Antal RoHS ECAD-modell Produkt
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Gate-sändarens läckström
Minsta drifttemperatur
Maximal drifttemperatur
Förpackning
Infineon Technologies IGBT-moduler 1200 V, 600 A common emitter IGBT module
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26På lager
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IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT-moduler 1200 V, 800 A common emitter IGBT module
Datablad
13På lager
Min.: 1
Multipla: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Tray