Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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STMicroelectronics MOSFET:er N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP packag
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 0.35Ohm 11A Mdmesh M2
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP packag
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 0.255Ohm 13A MDmesh M2
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1 000Förväntad 2026-03-23
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 800V 3.5Ohm typ 2A Zener-protected
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 950V 4.2Ohm typ 2A Zener-protected
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-Ch 650V 0.124 Ohm 22 A MDmesh
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1 000Förväntad 2026-04-06
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 0.108Ohm 26A MDmesh M2
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 950V 2Ohm typ 3.5A Zener-protected
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-Ch 800V 0.95Ohm 6A MDmesh K5
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-Ch 800V 0.76 Ohm 6AMDmesh K5
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package
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MOSFETs Si Through Hole TO-3PF-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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1 000Förväntad 2026-04-02
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IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics IGBTs 600V 20A High Speed Trench Gate IGBT
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IGBT Transistors Si Through Hole TO-220-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 60A Trench Gate 1.8V Vce IGBT
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo
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600Förväntad 2026-04-13
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IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
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591Förväntad 2026-04-01
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
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IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGBT
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IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs Trench gate H series 650V 80A HiSpd
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IGBT Transistors Si Through Hole TO-3P
STMicroelectronics MOSFET:er N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET
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MOSFETs Si SMD/SMT H2PAK-2