Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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STMicroelectronics MOSFET:er N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
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MOSFETs Si Through Hole TO-251-3
STMicroelectronics MOSFET:er N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 0.135Ohm typ. 22A MDmesh M2
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-Ch 650V 0.076 Ohm 30 A MDmesh M5
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 0.72Ohm 5.5A MDMesh M2
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
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MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFET:er N-Ch 800V 0.95 Ohm 6A MDmesh K5
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MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFET:er N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFET:er in a TO-220 package
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 950V 0.41Ohm typ. 12A MDmesh K5
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 1.06Ohm 4.5A MDmesh M2
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MOSFETs Si Through Hole TO-220-3


STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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IGBT Transistors Si Through Hole
STMicroelectronics MOSFET:er N-Ch 800V 0.76 Ohm 6 A MDmesh K5
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MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFET:er N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
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MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET:er N-channel 650 V, 420 mOhm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
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MOSFETs Si Through Hole TO-220FP-3
STMicroelectronics MOSFET:er N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
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MOSFETs Si Through Hole TO-3PF-3
STMicroelectronics MOSFET:er N-CH 600V 0.56Ohm 7.5A MDmesh M2
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 1.06Ohm 4.5A MDmesh M2
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2 265På lager
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MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFET:er N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
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958På lager
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MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFET:er N-Ch 550V 0.066Ohm 31A MDmesh M5
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MOSFETs Si SMD/SMT PowerFLAT-8x8-5
STMicroelectronics MOSFET:er N-CH 100V 0.020Ohm 10A STripFET VII
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MOSFETs Si SMD/SMT PowerFLAT-5x6-8
STMicroelectronics MOSFET:er N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 600V 1.06Ohm 4.5A MDmesh M2
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
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MOSFETs Si Through Hole TO-251-3
STMicroelectronics MOSFET:er N-CH 600V 0.86Ohm 5A MDmesh M2
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MOSFETs Si Through Hole TO-220-3