Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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STMicroelectronics MOSFET:er N-Ch 600 V 0.168 Ohm 18 A MDmesh M2
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255På lager
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MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFET:er N-CH 950V 2Ohm typ 3.5A Zener-protected
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461På lager
Min.: 1
Multipla: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package
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Produktkommenterarer
132På lager
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Multipla: 1

MOSFETs Si Through Hole TO-251-3
STMicroelectronics MOSFET:er N-CH 600V 0.72Ohm 5.5A MDMesh M2
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127På lager
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MOSFETs Si Through Hole TO-251-3
STMicroelectronics IGBTs 650V 40A Trench Gate Field-Stop IGBT
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600Förväntad 2026-02-19
Min.: 1
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IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
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591Förväntad 2026-04-01
Min.: 1
Multipla: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFET:er N-Ch 650V 0.098 Ohm 29 A MDmesh M5
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Ledtid för icke lagerfört 14 Veckor
Min.: 1 000
Multipla: 1 000
Papprulle: 1 000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3)
STMicroelectronics MOSFET:er N-CH 800V 2.1Ohm 3A Zener-protected
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Ledtid 14 Veckor
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Min.: 1
Multipla: 1
Papprulle: 2 500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFET:er N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
Datablad
Produktkommenterarer
Ledtid för icke lagerfört 14 Veckor
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 2 500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFET:er N-Ch 650V 0.098 Ohm 29A MDMesh M5 MOS
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Ledtid för icke lagerfört 14 Veckor
Min.: 1
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220FP packag
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Ledtid 14 Veckor
Min.: 1
Multipla: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics IGBTs 650V 60A Trench Gate Field-Stop IGBT
Datablad
Ledtid 14 Veckor
Min.: 1
Multipla: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Ledtid för icke lagerfört 14 Veckor
Min.: 1
Multipla: 1

IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Ledtid för icke lagerfört 14 Veckor
Min.: 600
Multipla: 600

IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo
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Ledtid 14 Veckor
Min.: 1
Multipla: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 650V 40A HSpd trench gate field-stop IGB
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Ledtid för icke lagerfört 14 Veckor
Min.: 1
Multipla: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics MOSFET:er N-CH 80V 17mOhm 180A STripFET VII
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Ledtid 26 Veckor
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

MOSFETs Si SMD/SMT H2PAK-2
STMicroelectronics MOSFET:er N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
Datablad
Ledtid för icke lagerfört 14 Veckor
Min.: 3 000
Multipla: 3 000
Papprulle: 3 000

MOSFETs Si SMD/SMT PowerFLAT-8x8-HV-5
STMicroelectronics MOSFET:er N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
Datablad
Ledtid för icke lagerfört 14 Veckor
Min.: 1 000
Multipla: 1 000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220 package
Datablad
Ledtid för icke lagerfört 14 Veckor
Min.: 1 000
Multipla: 1 000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET
Datablad
Ledtid 26 Veckor
Min.: 1
Multipla: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
Datablad
Ledtid för icke lagerfört 14 Veckor
Min.: 1 000
Multipla: 1 000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-Ch 800V .95Ohm 6A MDmesh K5
Datablad
Ledtid 14 Veckor
Min.: 1
Multipla: 1

MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFET:er N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET:er in TO-247 package
Datablad
Ledtid 16 Veckor
Min.: 1
Multipla: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
Datablad
Ledtid 16 Veckor
Min.: 1
Multipla: 1

MOSFETs Si Through Hole TO-247-3