Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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STMicroelectronics MOSFET:er N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er POWER MOSFET N-CH 650V 22 A
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600Förväntad 2026-03-09
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-Ch 650 V 0.124 Ohm 22 A MDmesh M5
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-247 package
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MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET:er N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET-moduler N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa
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MOSFET Modules Si Screw Mount ISOTOP
STMicroelectronics MOSFET:er N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
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3 951Förväntad 2026-03-16
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MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFET:er N-Ch 650V 0.024 Ohm 84A MDMesh M5
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2 979Förväntad 2026-09-28
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MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET:er N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP packag
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packa
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFET:er N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package
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399Förväntad 2026-11-23
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MOSFETs Si SMD/SMT ISOTOP-4
STMicroelectronics IGBTs 600V 60A trench gate field-stop IGBT
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFET:er N-CH 600V 0.078Ohm typ. 34A MDmesh M2
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MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFET:er N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
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1 200Förväntad 2026-04-13
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET:er N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5
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1 200Förväntad 2026-03-09
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MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET:er N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP packag
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-Ch 800V 0.3Ohm 14A pwr MOSFET
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 65V 33A MDMESH
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET:er N-CH 800V 2.1Ohm 3A Zener-protected
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MOSFETs Si Through Hole TO-220-3


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
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IGBT Transistors Si Through Hole TO-3PF