Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

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GeneSiC Semiconductor SiC-MOSFET:ar 1200V 18mohm TO-263-7 G3F SiC MOSFET 785På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 20mohm TO-LL G3F SiC MOSFET 1 913På lager
Min.: 1
Multipla: 1
: 1 200

SMD/SMT TO-LL N-Channel 650 V 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 547På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 642På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 498På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 18mohm TO-247-4 G3F SiC MOSFET
Datablad
428På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 20mohm TO-263-7 G3F SiC MOSFET 124På lager
800Förväntad 2026-08-31
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 20mohm TO-247-4 G3F SiC MOSFET 565På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 20mohm TO-263-7 G3F SiC MOSFET 648På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 100 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 20mohm TO-247-4 G3F SiC MOSFET 1 102På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 90 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 25mohm TO-263-7 G3F SiC MOSFET 1 041På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 25mohm TO-247-4 G3F SiC MOSFET 247På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 27mohm TO-263-7 G3F SiC MOSFET 778På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 78 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 27mohm TO-247-4 G3F SiC MOSFET 1 098På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 27mohm TO-LL G3F SiC MOSFET 1 200På lager
Min.: 1
Multipla: 1
: 1 200

SMD/SMT TO-LL N-Channel 650 V 27 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 34mohm TO-247-4 G3F SiC MOSFET 456På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 1200V 40mohm TO-263-7 G3F SiC MOSFET 786På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 40mohm TO-247-3 G3F SiC MOSFET 1 163På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 40mohm TO-263-7 G3F SiC MOSFET 775På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 57 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 40mohm TO-247-4 G3F SiC MOSFET 1 058På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 40mohm TO-LL G3F SiC MOSFET 1 055På lager
Min.: 1
Multipla: 1
: 1 200

SMD/SMT TO-LL N-Channel 650 V 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 55mohm TO-247-3 G3F SiC MOSFET 1 129På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 55mohm TO-263-7 G3F SiC MOSFET 755På lager
Min.: 1
Multipla: 1
: 800

GeneSiC Semiconductor SiC-MOSFET:ar 650V 55mohm TO-247-4 G3F SiC MOSFET 1 056På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFET:ar 650V 55mohm TO-LL G3F SiC MOSFET 1 200På lager
Min.: 1
Multipla: 1
: 1 200