FGHL50T65MQDTx Field Stop Trench IGBTs

onsemi FGHL50T65MQDTx Field Stop Trench IGBTs are 4th generation mid-speed IGBTs technology co-packed with a fully rated current diode. These IGBTs operate at 175°C maximum junction temperature. Features include high current capability, smooth and optimized switching, and tight parameter distribution. Typical applications include solar inverters, UPS, ESS, converters, and FPS.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Serie
Förpackning

onsemi IGBTs IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
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Si TO-247-3 Through Hole Single 650 V 1.45 V - 20 V, 20 V 80 A 268 W - 55 C + 175 C FGHL50T65MQDT Tube

onsemi IGBTs IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
Datablad
321På lager
Min.: 1
Multipla: 1

Si TO-247-4 Through Hole Single 650 V 1.45 V - 20 V, 20 V 80 A 268 W - 55 C + 175 C FGHL50T65MQDTL4 Tube