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SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
157,20 kr
-
1 665På lager
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R022M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1 665På lager
|
|
Min.: 1
Multipla: 1
Max.: 50
|
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|
Through Hole
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TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
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- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
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+ 175 C
|
329 W
|
Enhancement
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CoolSiC
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|
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SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
242,74 kr
-
242På lager
-
480Förväntad 2026-06-18
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R012M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
242På lager
480Förväntad 2026-06-18
|
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Min.: 1
Multipla: 1
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|
Through Hole
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TO-247-4
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N-Channel
|
1 Channel
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1.2 kV
|
129 A
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12 mOhms
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- 10 V, + 25 V
|
5.1 V
|
124 nC
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- 55 C
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+ 175 C
|
|
Enhancement
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CoolSiC
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SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
183,27 kr
-
654På lager
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R017M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
654På lager
|
|
Min.: 1
Multipla: 1
Max.: 20
|
|
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Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
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SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
136,21 kr
-
483På lager
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R026M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
483På lager
|
|
Min.: 1
Multipla: 1
Max.: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
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SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
114,27 kr
-
826På lager
-
240Förväntad 2026-06-11
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R034M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
826På lager
240Förväntad 2026-06-11
|
|
Min.: 1
Multipla: 1
Max.: 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
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SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
92,64 kr
-
804På lager
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R053M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
804På lager
|
|
|
92,64 kr
|
|
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54,59 kr
|
|
|
46,22 kr
|
|
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46,11 kr
|
|
|
45,05 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
108,86 kr
-
1 992På beställningen
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R040M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1 992På beställningen
På beställningen:
312 Förväntad 2026-12-22
480 Förväntad 2027-01-07
720 Förväntad 2027-01-28
480 Förväntad 2027-04-29
Fabrikens ledtid:
40 Veckor
|
|
|
108,86 kr
|
|
|
64,98 kr
|
|
|
55,65 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
82,26 kr
-
480Förväntad 2027-03-04
-
Ny produkt
|
Mouser artikelnummer
726-IMZC120R078M2HXK
Ny produkt
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
480Förväntad 2027-03-04
|
|
|
82,26 kr
|
|
|
48,02 kr
|
|
|
40,49 kr
|
|
|
38,58 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|