TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
If - Framström
Vrrm - Repetativ backspänning
Vf - Framspänning
Ifsm - Stötström framåt
Ir - Motström
Förpackning
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 3A TO-220-2L
Datablad
1På lager
Min.: 1
Multipla: 1

Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 10A DFN8x8
Datablad
1 933På lager
Min.: 1
Multipla: 1
: 2 500

SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 12A DFN8x8
Datablad
3 858På lager
Min.: 1
Multipla: 1
: 2 500

SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 4A DFN8x8
Datablad
6 976På lager
Min.: 1
Multipla: 1
: 2 500

SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 6A DFN8x8
Datablad
4 849På lager
Min.: 1
Multipla: 1
: 2 500

SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 8A DFN8x8
Datablad
2 245På lager
Min.: 1
Multipla: 1
: 2 500

SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 12A TO-220-2L
Datablad
108På lager
Min.: 1
Multipla: 1

Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 4A TO-220-2L
Datablad
224På lager
Min.: 1
Multipla: 1

Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 6A TO-220-2L
Datablad
150På lager
Min.: 1
Multipla: 1

Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 8A TO-220-2L
Datablad
31På lager
Min.: 1
Multipla: 1

Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 10A TO-220-2L
Datablad
150Förväntad 2026-07-10
Min.: 1
Multipla: 1

Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba SiC-schottkydioder G3 SiC-SBD 650V 2A TO-220-2L
Datablad
172Förväntad 2026-11-05
Min.: 1
Multipla: 1

Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube